Optimization of Source/Drain Doping Level of Carbon Nanotube Field-Effect Transistors to Suppress OFF-State Leakage Current while Keeping Ideal ON-State Current
スポンサーリンク
概要
- 論文の詳細を見る
The effects of doping concentration variation in source/drain junctions on the characteristics of carbon nanotube field-effect transistors (CNFETs) have been studied in order to realize high performance CNFETs, where suppressed OFF-state leakage current and ideal maximum ON-state current were obtained. The characteristics of CNFETs with doped source/drain regions have been studied by solving the Poisson and carrier transport equations self-consistently. The transmission coefficient through the bandgap (E_{\text{g}}) has been calculated using the Wentzel--Kramers--Brillouin (WKB) approximation in order to take into account the band-to-band tunneling (BTBT) leakage current. The doping is characterized by the Fermi level (E_{\text{d}}) in a doped region which is measured from the conduction band edge. In this study, it is demonstrated that, when the power supply voltage (V_{\text{dd}}) is greater than the bandgap of carbon nanotubes (CNTs), optimized doping level E_{\text{d}} of V_{\text{dd}}-E_{\text{g}} shows the lowest OFF-state current (I_{\text{OFF}}). On the other hand, when V_{\text{dd}} is smaller than E_{\text{g}}, I_{\text{OFF}} monotonically decreases as E_{\text{d}} decreases, although the aggressively lowered doping concentration results in lower ON-state current. We also demonstrated that CNFETs with low source/drain doping concentration exhibit current saturation at higher gate voltages. The current saturation results from the fact that the injection velocity to the channel is limited by the velocity in the source region which is determined by the source doping level. We showed that, in order to avoid the current saturation, doping level should be higher than 0.3 eV, regardless of carbon nanotube diameter.
- 2012-06-25
著者
-
Uchida Ken
Department Of Biology Faculty Of Science Kumamoto University
-
Uchida Ken
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
-
Algul Berrin
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
-
Algul Berrin
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S9-12 Ookayama, Meguro, Tokyo 152-8552, Japan
関連論文
- Control of Inter-Dot Electrostatic Coupling by a Side Gate in a Silicon Double Quantum Dot Operating at 4.5K
- Diagnosis of Tis/T1 Breast Cancer Extent by Multislice Helical CT : A Novel Classification of Tumor Distribution
- Mammary ductoscopy : current issues and perspectives
- Screening ultrasonography revealed 15% of mammographically occult breast cancers
- Percutaneous Endoscopy-Guided Biopsy of an Intracystic Tumor with a Mammary Ductoscopy
- ^Tc-MIBI SPECT Compared with ^TI-SPECT for the Detection of Breast Cancer and Lymph Node Metastasis
- Effect of Glucose on the H_2O_2-Induced Synthesis of Peroxidase in Escherichia coli
- Malignant neoplasm in the axilla of a male : suspected primary carcinoma of an accessory mammary gland
- Metachronous secondary primary occult breast cancer initially presenting with metastases to the contralateral axillary lymph nodes : report of a case
- Primary Small-Cell Neuroendocrine Carcinoma of the Breast : Report of a Case
- Primary Rhabdomyosarcoma of the Breast in a 13-Year-Old Girl : Report of a Case
- Detection of MUC1 and Keratin 19 mRNAs in the Bone Marrow by Quantitative RT-PCR Predicts the Risk of Distant Metastasis in Breast Cancer Patients
- Study on Device Parameters of Carbon Nanotube Field Electron Transistors to Realize Steep Subthreshold Slope of Less than 60 mV/Decade
- Simulation Study of Charge Modulation in Coupled Quantum Dots in Silicon
- Malignant Melanoma Originating on the Female Nipple : A Case Report
- Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors
- Influence of aerobic exercise with an intermission, using a bicycle ergometer, on fat metabolism in obese patients with gonarthrosis
- Optimization of Source/Drain Doping Level of Carbon Nanotube Field-Effect Transistors to Suppress OFF-State Leakage Current while Keeping Ideal ON-State Current
- Growth of Narrow and Straight Germanium Nanowires by Vapor--Liquid--Solid Chemical Vapor Deposition
- Enhanced Degradation by Negative Bias Temperature Stress in Si Nanowire Transistor
- Advantages of Densely Packed Multi-Wire Transistors with Planar Gate Structure Fabricated on Low-$k$ Buried Insulator over Planar Silicon-on-Insulator Devices
- Self-Heating Effects and Analog Performance Optimization of Fin-Type Field-Effect Transistors
- Impact of Deformation Potential Increase at Si/SiO
- Experimental Study of Two-Terminal Resistive Random Access Memory Realized in Mono- and Multilayer Exfoliated Graphene Nanoribbons (Special Issue : Solid State Devices and Materials)
- Possible clinical cure of metastatic breast cancer : lessons from our 30-year experience with oligometastatic breast cancer patients and literature review