Formation Mechanism of 100-nm-Scale Periodic Structures in Silicon Using Magnetic-Field-Assisted Anodization
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概要
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We demonstrate highly directional etching in silicon 100 nm in diameter with an aspect ratio of 160 with no spiking on the pore walls using magnetic-field-assisted anodization. The relationship between the surface geometry of a silicon electrode and its highly directional etching properties have been investigated. Specifically, we show that the pore shape and pore wall orientation are not determined by the surface pattern but by the etching mechanisms specific to the magnetic-field-assisted anodization. These etching mechanisms enable highly directional and high aspect ratio etching at diameters below 100 nm in scale.
- 2008-09-25
著者
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Urakawa Kei
Graduate School Of Engineering Tokyo University Of Agriculture And Technology
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Koshida Nobuyoshi
Graduate School Of Eng. Tokyo Univ. Of A&t
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Oda Shunri
Quantum Nanoelectronics Research Center And Department Of Physical Electronics Tokyo Institute Of Technology
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Mizuta Hiroshi
School of Electronic and Computer Science, University of Southampton, Highfield, Southampton SO17 1BJ, U.K.
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Nakamine Yoshifumi
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8852, Japan
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Hippo Daihei
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Tsuchiya Yoshishige
Quantum Nanoelectronics Research Center and Department of Physical Electronics, Tokyo Institute of Technology, and SORST, Japan Science and Technology Agency, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Nakamine Yoshifumi
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Oda Shunri
Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
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Urakawa Kei
Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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