Functional devices based on quantum-sized nanosilicon (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
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概要
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The technological potential of quantum-sized nanocrystalline silicon (nc-Si) devices is presented in terms of photonic, electronic, and acoustic applications. In nc-Si, the basic property of bulk silicon is totally modified by quantum confinement effect, and then various useful functions such as efficient visible luminescence at room temperature, ballistic electron emission, and thermally-induced ultrasonic emission. Some topics on the characteristics of these effects are reported including their device implementations. The development toward possible functional integration is also discussed.
- 2007-06-18
著者
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KOSHIDA Nobuyoshi
Graduate School of Engineering, Tokyo University of Agriculture and Technology
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Gelloz Bernard
Graduate School Of Engineering Tokyo University Of A & T
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Koshida Nobuyoshi
Graduate School Of Engineering Tokyo University Of A & T
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Koshida Nobuyoshi
Graduate School Of Eng. Tokyo Univ. Of A&t
関連論文
- New Design Concept and Fabrication Process for Three-Dimensional Silicon Photonic Crystal Structures
- Functional devices based on quantum-sized nanosilicon (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Functional devices based on quantum-sized nanosilicon (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
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