Specific Blue Light Emission from Nanocrystalline Porous Si Treated by High-Pressure Water Vapor Annealing

スポンサーリンク

概要

• 論文の詳細を見る

• The effects of a combination of thermal oxidation at various temperatures and high-pressure water vapor annealing (HWA) on the luminescence and structural characteristics of nanocrystalline porous Si (PSi) have been investigated. The influences of initial PSi porosity and excitation power have also been studied. Strong, stable, and single-band blue emission was obtained when PSi was first treated by thermal oxidation above 800 °C and then by HWA. This blue emission can coexist with the conventional red emission band of Si nanocrystals when PSi is not sufficiently oxidized. The blue emission may originate from localized states in the Si oxide or at the silicon/oxide interface. HWA very efficiently boosts the emission from these localized states by increasing the quality of the oxide network. This result is useful for the realization of short-wavelength Si-based optoelectronic devices.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-04-25

著者

• Gelloz Bernard

  Graduate School Of Engineering Tokyo University Of A & T

• Koshida Nobuyoshi

  Graduate School Of Eng. Tokyo Univ. Of A&t

• Mentek Romain

  Graduate school of Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan

関連論文

• Functional devices based on quantum-sized nanosilicon (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Functional devices based on quantum-sized nanosilicon (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Novel Device Applications of Quantum-Sized Nanocrystalline Silicon
• Multilayered thin metal film deposition by sequential operation of nanosilicon electron emitter in metal-salt solutions (Special issue: Microprocesses and nanotechnology)
• Electroluminescence Enhancement Assisted with Ballistic Electron Excitation in Nanocrystalline Silicon Diodes
• Electroluminescence Enhancement Assisted with Ballistic Electron Excitation in Nanocrystalline Silicon Diodes
• Formation Mechanism of 100-nm-Scale Periodic Structures in Silicon Using Magnetic-Field-Assisted Anodization
• Counter-Electrode-Free Thin Cu Film Deposition Based on Ballistic Electron Injection into CuSO4 Solution from Nanosilicon Emitter
• Highly enhanced efficiency and stability of Photo- and Electro-Luminescence of Nano-Crystalline Porous Silicon by High-Pressure Water Vapor Annealing
• Highly Efficient and Stable Photoluminescence of Nanocrystalline Porous Silicon with Fully Annealed and Passivated Surfaces
• Acoustic Wave Manipulation by Phased Operation of Two-Dimensionally Arrayed Nanocrystalline Silicon Ultrasonic Emitters
• Cavity Effect in Nanocrystalline Porous Silicon Ballistic Lighting Device
• Acoustic Emission Characteristics of Nanocrystalline Porous Silicon Device Driven as an Ultrasonic Speaker
• Development of Flexible Electrochromic Device with Thin Film Configuration
• New Operation Mode of Nanocrystalline Silicon Ultrasonic Emitter for the Use as an Audio Speaker
• Functions and Device Applications of Quantum-sized Silicon
• Structural and Luminescence Properties of Highly Crystalline ZnO Nanoparticles Prepared by Sol--Gel Method
• Strain Effects on Avalanche Multiplication in a Silicon Nanodot Array (Special Issue : Solid State Devices and Materials (2))
• Specific Blue Light Emission from Nanocrystalline Porous Si Treated by High-Pressure Water Vapor Annealing
• Highly Enhanced Efficiency and Stability of Photo- and Electro-luminescence of Nano-crystalline Porous Silicon by High-Pressure Water Vapor Annealing
• Acoustic Wave Manipulation by Phased Operation of Two-Dimensionally Arrayed Nanocrystalline Silicon Ultrasonic Emitters
• Three-Dimensional Image Sensing in Air by Thermally Induced Ultrasonic Emitter Based on Nanocrystalline Porous Silicon
• New Design Concept and Fabrication Process for Three-Dimensional Silicon Photonic Crystal Structures
• Acoustic Emission Characteristics of Nanocrystalline Porous Silicon Device Driven as an Ultrasonic Speaker
• New Operating Mode of Nanocrystalline Silicon Ultrasonic Emitters for Use as Audio Speakers
• Highly Efficient and Stable Photoluminescence of Nanocrystalline Porous Silicon by Combination of Chemical Modification and Oxidation under High Pressure
• Cavity Effect in Nanocrystalline Porous Silicon Ballistic Lighting Device
• Disorder-Induced Enhancement of Avalanche Multiplication in a Silicon Nanodot Array

もっと見る 閉じる

スポンサーリンク