Koshida Nobuyoshi | Graduate School Of Eng. Tokyo Univ. Of A&t
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概要
関連著者
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Koshida Nobuyoshi
Graduate School Of Eng. Tokyo Univ. Of A&t
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Gelloz Bernard
Graduate School Of Engineering Tokyo University Of A & T
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KOSHIDA Nobuyoshi
Graduate School of Engineering, Tokyo University of Agriculture and Technology
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Koshida Nobuyoshi
Graduate School Of Engineering Tokyo University Of Agriculture And Technology
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Gelloz Bernard
Graduate School Of Engineering Tokyo University Of Agriculture And Technology
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UCHIDA Tetsuya
Graduate School of Natural Science and Technology, Okayama University
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Kojima A
Gunma National Coll. Technol. Maebashi Jpn
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Kojima A
Quantum 14 Co. Ltd.
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Urakawa Kei
Graduate School Of Engineering Tokyo University Of Agriculture And Technology
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Mori Nobuya
Graduate School Of Engineering Osaka University
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Niibe Masao
Graduate School Of Engineering Tokyo University Of Agriculture And Technology
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Koshida N
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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GELLOZ Bernard
Graduate school of Engineering, Tokyo University of Agriculture and Technology
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KOJIMA Akira
Quantum 14 Co.
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Minari Hideki
Graduate School Of Engineering Osaka University
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Uchida Tetsuya
Graduate School Of Engineering Tokyo University Of Agriculture And Technology
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Sugawara Masahito
Graduate School Of Engineering Tokyo University Of Agriculture And Technology
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Komoda Takuya
Advanced Technologies Development Laboratory Matsushita Electric Works Ltd.
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Tsubaki Kenji
Advanced Technologies Development Laboratory Matsushita Electric Works Ltd.
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Sato Masataka
Graduate School Of Engineering Tokyo University Of Agriculture And Technology
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Koshida Nobuyoshi
Graduate School Of Engineering Tokyo University Of A & T
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Kiuchi Akira
Graduate School Of Engineering Tokyo University Of Agriculture And Technology
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Gelloz Bernard
Graduate school of Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Ohta Toshiyuki
Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184-8588, Japan
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KAWATA Yoshiyuki
Department of Physical Electronics and Quantum Nanoelectronics Research Center, Tokyo Institute of T
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TSUCHIYA Yoshishige
Department of Physical Electronics and Quantum Nanoelectronics Research Center, Tokyo Institute of T
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Hippo Daihei
Department Of Physical Electronics And Quantum Nanoelectronics Research Center Tokyo Institute Of Te
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Tomita Masanori
Faculty Of Agriculture Hirosaki University
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Oda Shunri
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Mizuta Hiroshi
Department Of Orthopaedic And Neuro-musculoskeletal Surgery Faculty Of Medical And Pharmaceutical Sc
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Kanda Takayuki
Graduate School Of Engineering Tokyo University Of Agriculture And Technology
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GELLOZ Bernard
Department of Electrical and Electronic Engineering, Faculty of Technology, Tokyo University of Agri
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KOMODA Takuya
Advanced Technologies Development Laboratory, Matsushita Electric Works, Ltd.
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Yoshimura Hideo
Graduate School Of Engineering Tokyo University Of Agriculture And Technology
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SUGAWARA Masahito
Graduate School of Engineering, Tokyo University of Agriculture and Technology
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SATO Masataka
Graduate school of Engineering, Tokyo University of Agriculture and Technology
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Sakaguchi Tomonori
Graduate School Of Engineering Tokyo University Of Agriculture And Technology
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TSUBAKI Kenji
Advanced Technologies Development Laboratory, Matsushita Electric Works, Ltd.
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Koshida Nobuyoshi
Graduate School Strategic Research Initiative For Future Nano-science And Technology Tokyo Univ. Of
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KIUCHI Akira
Graduate School of Engineering, Tokyo University of Agriculture and Technology
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Oda Shunri
Quantum Nanoelectronics Research Center And Department Of Physical Electronics Tokyo Institute Of Technology
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Tsubaki Kenji
Advanced Technologies Development Laboratory, Matsushita Electric Works, Ltd., Kadoma, Osaka 571-8686, Japan
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Elhouichet Habib
Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050, Tunisia
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Bousslama Wiem
Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050, Tunisia
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Sieber Brigitte
UMET, UMR CNRS 8207, Université Lille 1, 59655 Villeneuve d'Ascq Cédex, France
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Addad Ahmed
UMET, UMR CNRS 8207, Université Lille 1, 59655 Villeneuve d'Ascq Cédex, France
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Moreau Myriam
LASIR UMR CNRS 8516, Université Lille 1, 59655 Villeneuve d'Ascq Cédex, France
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Férid Mokhtar
Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050, Tunisia
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Addad Ahmed
UMET, UMR CNRS 8207, Université Lille 1, 59655 Villeneuve d'Ascq Cédex, France
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Moreau Myriam
LASIR UMR CNRS 8516, Université Lille 1, 59655 Villeneuve d'Ascq Cédex, France
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Bousslama Wiem
Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050, Tunisia
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Mizuta Hiroshi
School of Electronic and Computer Science, University of Southampton, Highfield, Southampton SO17 1BJ, U.K.
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Tsubaki Kenji
Corporate R&D Planning Office, Matsushita Electric Works, Ltd., Kadoma, Osaka 571-8686, Japan
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Nakamine Yoshifumi
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8852, Japan
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Watanabe Takanobu
Faculty of Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555, Japan
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Hippo Daihei
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Tsuchiya Yoshishige
Quantum Nanoelectronics Research Center and Department of Physical Electronics, Tokyo Institute of Technology, and SORST, Japan Science and Technology Agency, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Tsuchiya Yoshishige
Department of Physical Electronics and Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Mentek Romain
Graduate school of Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Kawata Yoshiyuki
Department of Physical Electronics and Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Gelloz Bernard
Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184-8588, Japan
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Gelloz Bernard
Department of Applied Physics, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Koshida Nobuyoshi
Graduate school of Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Koshida Nobuyoshi
Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Koshida Nobuyoshi
Graduate School of Engineering, Tokyo University of Agriculture and Technology Koganei, Tokyo 184-8588, Japan
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Koshida Nobuyoshi
Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Yamanaka Hiroshi
Corporate R&D Planning Office, Matsushita Electric Works, Ltd., Kadoma, Osaka 571-8686, Japan
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Kitada Kosaku
Corporate R&D Planning Office, Matsushita Electric Works, Ltd., Kadoma, Osaka 571-8686, Japan
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Komoda Takuya
Corporate R&D Planning Office, Matsushita Electric Works, Ltd., Kadoma, Osaka 571-8686, Japan
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Komoda Takuya
Advanced Technologies Development Laboratory, Matsushita Electric Works, Ltd., Kadoma, Osaka 571-8686, Japan
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Komoda Takuya
Corporate R&D Planning Office, Matsushita Electric Works, Ltd., Kadoma, Osaka 571-8686, Japan
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Kitada Kosaku
Corporate R&D Planning Office, Matsushita Electric Works, Ltd., Kadoma, Osaka 571-8686, Japan
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Sieber Brigitte
UMET, UMR CNRS 8207, Université Lille 1, 59655 Villeneuve d'Ascq Cédex, France
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Nakamine Yoshifumi
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Hippo Daihei
Department of Physical Electronics and Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Oda Shunri
Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
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Sato Masataka
Graduate School of Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Kiuchi Akira
Graduate School of Engineering, Tokyo University of Agriculture and Technology Koganei, Tokyo 184-8588, Japan
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Sugawara Masahito
Graduate School of Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Yamanaka Hiroshi
Corporate R&D Planning Office, Matsushita Electric Works, Ltd., Kadoma, Osaka 571-8686, Japan
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Minari Hideki
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Urakawa Kei
Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Urakawa Kei
Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Uno Shigeyasu
CREST, JST, Chiyoda, Tokyo 102-0075, Japan
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Mizuta Hiroshi
Faculty of Physical and Applied Science, University of Southampton, Southampton SO17 1BJ, U.K.
著作論文
- Functional devices based on quantum-sized nanosilicon (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Functional devices based on quantum-sized nanosilicon (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Novel Device Applications of Quantum-Sized Nanocrystalline Silicon
- Multilayered thin metal film deposition by sequential operation of nanosilicon electron emitter in metal-salt solutions (Special issue: Microprocesses and nanotechnology)
- Electroluminescence Enhancement Assisted with Ballistic Electron Excitation in Nanocrystalline Silicon Diodes
- Electroluminescence Enhancement Assisted with Ballistic Electron Excitation in Nanocrystalline Silicon Diodes
- Formation Mechanism of 100-nm-Scale Periodic Structures in Silicon Using Magnetic-Field-Assisted Anodization
- Counter-Electrode-Free Thin Cu Film Deposition Based on Ballistic Electron Injection into CuSO4 Solution from Nanosilicon Emitter
- Highly enhanced efficiency and stability of Photo- and Electro-Luminescence of Nano-Crystalline Porous Silicon by High-Pressure Water Vapor Annealing
- Highly Efficient and Stable Photoluminescence of Nanocrystalline Porous Silicon with Fully Annealed and Passivated Surfaces
- Acoustic Wave Manipulation by Phased Operation of Two-Dimensionally Arrayed Nanocrystalline Silicon Ultrasonic Emitters
- Cavity Effect in Nanocrystalline Porous Silicon Ballistic Lighting Device
- Acoustic Emission Characteristics of Nanocrystalline Porous Silicon Device Driven as an Ultrasonic Speaker
- Development of Flexible Electrochromic Device with Thin Film Configuration
- New Operation Mode of Nanocrystalline Silicon Ultrasonic Emitter for the Use as an Audio Speaker
- Functions and Device Applications of Quantum-sized Silicon
- Structural and Luminescence Properties of Highly Crystalline ZnO Nanoparticles Prepared by Sol--Gel Method
- Strain Effects on Avalanche Multiplication in a Silicon Nanodot Array (Special Issue : Solid State Devices and Materials (2))
- Specific Blue Light Emission from Nanocrystalline Porous Si Treated by High-Pressure Water Vapor Annealing
- Highly Enhanced Efficiency and Stability of Photo- and Electro-luminescence of Nano-crystalline Porous Silicon by High-Pressure Water Vapor Annealing
- Acoustic Wave Manipulation by Phased Operation of Two-Dimensionally Arrayed Nanocrystalline Silicon Ultrasonic Emitters
- Three-Dimensional Image Sensing in Air by Thermally Induced Ultrasonic Emitter Based on Nanocrystalline Porous Silicon
- New Design Concept and Fabrication Process for Three-Dimensional Silicon Photonic Crystal Structures
- Acoustic Emission Characteristics of Nanocrystalline Porous Silicon Device Driven as an Ultrasonic Speaker
- New Operating Mode of Nanocrystalline Silicon Ultrasonic Emitters for Use as Audio Speakers
- Highly Efficient and Stable Photoluminescence of Nanocrystalline Porous Silicon by Combination of Chemical Modification and Oxidation under High Pressure
- Cavity Effect in Nanocrystalline Porous Silicon Ballistic Lighting Device
- Disorder-Induced Enhancement of Avalanche Multiplication in a Silicon Nanodot Array