Nakamine Yoshifumi | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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概要
- Nakamine Yoshifumiの詳細を見る
- 同名の論文著者
- Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japanの論文著者
関連著者
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Nakamine Yoshifumi
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Oda Shunri
Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
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Kodera Tetsuo
Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
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Oda Shunri
Quantum Nanoelectronics Research Center And Department Of Physical Electronics Tokyo Institute Of Technology
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Nakamine Yoshifumi
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8852, Japan
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Usami Koichi
Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
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Usami Koichi
Quantum Nanoelectronics Research Center and Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8852, Japan
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Ferdous Susoma
Quantum Nanoelectronics Research Center and Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8852, Japan
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Kawano Yukio
Quantum Nanoelectronics Research Center and Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8852, Japan
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Urakawa Kei
Graduate School Of Engineering Tokyo University Of Agriculture And Technology
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Brandt Martin
Walter Schottky Institut Technische Universitat Munchen
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Koshida Nobuyoshi
Graduate School Of Eng. Tokyo Univ. Of A&t
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Uchida Ken
Quantum Nanoelectronics Research Center and Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-Okayama, Meguro, Tokyo 152-8552, Japan
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Mizuta Hiroshi
School of Electronic and Computer Science, University of Southampton, Highfield, Southampton SO17 1BJ, U.K.
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Kodera Tetsuo
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8852, Japan
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Inaba Naoki
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8852, Japan
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Pereira Rui
Walter Schottky Institut, Technische Universitat Münhen, Zografou, 85748 Garching, Germany
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Stegner Andre
Walter Schottky Institut, Technische Universitat Münhen, Zografou, 85748 Garching, Germany
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Stutzman Martin
Walter Schottky Institut, Technische Universitat Münhen, Zografou, 85748 Garching, Germany
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Pereira Rui
Walter Schottky Institut, Technische Universitat Münhen, Zografou, 85748 Garching, Germany
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Stegner Andre
Walter Schottky Institut, Technische Universitat Münhen, Zografou, 85748 Garching, Germany
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Hippo Daihei
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Tsuchiya Yoshishige
Quantum Nanoelectronics Research Center and Department of Physical Electronics, Tokyo Institute of Technology, and SORST, Japan Science and Technology Agency, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Oda Shunri
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8852, Japan
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Brandt Martin
Walter Schottky Institut, Technische Universitat Münhen, Zografou, 85748 Garching, Germany
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Stutzman Martin
Walter Schottky Institut, Technische Universitat Münhen, Zografou, 85748 Garching, Germany
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Urakawa Kei
Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
著作論文
- Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System
- Formation Mechanism of 100-nm-Scale Periodic Structures in Silicon Using Magnetic-Field-Assisted Anodization
- Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High-Performance Electron Devices
- Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High-Performance Electron Devices (Special Issue : Solid State Devices and Materials)