Nagami Tasuku | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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概要
- Nagami Tasukuの詳細を見る
- 同名の論文著者
- Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japanの論文著者
関連著者
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Tsuchiya Yoshishige
School Of Electronics And Computer Science University Of Southampton
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Nagami Tasuku
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Arai Tadashi
Central Research Laboratory Hitachi Ltd.
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Oda Shunri
Quantum Nanoelectronics Research Center And Department Of Physical Electronics Tokyo Institute Of Technology
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Uchida Ken
Quantum Nanoelectronics Research Center and Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-Okayama, Meguro, Tokyo 152-8552, Japan
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Shunri Oda
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552, Japan
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Hiroshi Mizuta
School of Electronics and Computer Science, University of Southampton, Highfield, Southampton, Hampshire SO17 1BJ, U.K.
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Saito Shinichi
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Mizuta Hiroshi
School of Electronic and Computer Science, University of Southampton, Highfield, Southampton SO17 1BJ, U.K.
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Shimada Toshikazu
Quantum 14 Co., Ltd., Koganei, Tokyo 184-8588, Japan
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Tasuku Nagami
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Tsuchiya Yoshishige
School of Electronics and Computer Science, University of Southampton, SO17 1BJ Southampton, U.K.
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Yoshishige Tsuchiya
School of Electronics and Computer Science, University of Southampton, SO17 1BJ Southampton, U.K.
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Shunri Oda
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Oda Shunri
Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
著作論文
- Scaling Analysis of Nanoelectromechanical Memory Devices
- Electromechanical Simulation of Switching Characteristics for Nanoelectromechanical Memory