Electronic Energy Level of Off-Center Substitutional Nitrogen in Silicon: Determination by Electron Spin Resonance Measurements : Electrical Properties Condensed Matter
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概要
- 論文の詳細を見る
It is demonstrated that a deep level of a paramagnetic off-center substitutional N can be determined by electron spin resonance (ESR) measurements of the peak-tp-peak derivative linewidth ΔH_<msl> over a wide temperature region from 150 to 550 K. The temperature dependence of ΔH_<msl> observed above 〜330 K is interpreted in terms of one type of motional broadening. According to this model, we obtain an energy level of 0.33±0.02 eV below the conduction band and the electron capture cross section σ_0 of 1.0×10<-15> cm^2, which are in agreement with one of the levels obtained by deep-level transient spectroscopy (DLTS).
- 社団法人応用物理学会の論文
- 1988-08-20
著者
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Masuda Kohzoh
Institute Of Materials Science University Of Tsukuba
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Murakami Kouichi
Institute Of Applied Physics University Of Tsukuba
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KURIBAYASHI Hitoshi
Institute of Materials Science, University of Tsukuba
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Kuribayashi Hitoshi
Institute Of Materials Science University Of Tsukuba
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