Synthesis of New Amorphous Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters

概要

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We synthesized amorphous films composed of transition-metal-encapsulating Si clusters ($M$Sin: $M=\text{Mo}$ or Nb) by deposition of hydrogenated $M$SinHx clusters onto silica substrates followed by annealing at 500 °C for dehydrogenation. The MoSin ($n=7{\mbox{--}}16$) cluster films are semiconductors with an optical gap ${>}0.6$ eV and resistivity ${>}1$ $\Omega$ cm. In particular, the MoSi12 cluster film has a large gap of 1.1 eV and resistivity of 120 $\Omega$ cm with high hole mobility of 32 cm2/(V s). In these films, Si atoms form amorphous networks similar to those in hydrogenated amorphous Si but the electronic disorder is reduced by the use of $M$Sin clusters as the building blocks.
Japan Society of Applied Physicsの論文
2008-12-25