Nano-Ablation of Inorganic Materials Using Laser Plasma Soft X-rays at around 10 nm
スポンサーリンク
概要
- 論文の詳細を見る
We have investigated the direct nanomachining of inorganic materials using laser plasma soft X-rays (LPSXs). LPSXs were generated by the irradiation of Ta targets with Q-switched 532 nm Nd:YAG laser light at an energy density of ${\sim}10^{4}$ J/cm2. Under this condition, Ta plasma emits soft X-rays at around 10 nm. The LPSXs were focused on the surfaces of inorganic materials, using an ellipsoidal mirror that we desined so as to focus LPSXs at around 10 nm efficiently. We found that synthetic quartz glass, fused silica, Pyrex, LiF, CaF2, Al2O3, and LiNbO3 can be machined. Typically, silica glass is ablated at 47 nm/shot, and it has a surface roughness less than 10 nm after 10 shots. To demonstrate lateral resolution, we fabricated a WSi contact mask with 200-nm-pitch line-and-space patterns on quartz glass. After soft X-ray irradiation, trench structures with a width of 70 nm were clearly observed.
- 2006-06-30
著者
-
Niino Hiroyuki
Photonic Research Institute National Institute Of Advanced Industrial Science And Technology
-
Murakami Kouichi
Institute Of Applied Physics University Of Tsukuba
-
Makimura Tetsuya
Institute Of Applied Physics University Of Tsukuba
-
Uchida Satoshi
Institute For Advanced Materials Processing Tohoku University
-
Niino Hiroyuki
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8565, Japan
-
Miyamoto Hisao
Institute of Applied Physics, University of Tsukuba, 1-1-1 Ten'nodai, Tsukuba, Ibaraki 305-8573, Japan
-
Fujimori Takashige
Institute of Applied Physics, University of Tsukuba, 1-1-1 Ten'nodai, Tsukuba, Ibaraki 305-8573, Japan
-
Miyamoto Hisao
Institute of Applied Physics, University of Tsukuba, 1-1-1 Ten'nodai, Tsukuba, Ibaraki 305-8573, Japan
-
Fujimori Takashige
Institute of Applied Physics, University of Tsukuba, 1-1-1 Ten'nodai, Tsukuba, Ibaraki 305-8573, Japan
関連論文
- Improvement in Electrical Conductivity of Indium Tin Oxide Films Prepared via Pulsed Laser Deposition on Electric-Field-Applied Substrates(Optics and Quantum Electronics)
- Strong Wavelength Dependence of Laser Ablation Fragments of Superconductor YBa_2Cu_3O_y
- Laser Excitation Effects on Laser Ablated Particles in Fabrication of High T_c Superconducting Thin Films
- Y-Ba-Cu Oxide Films Formed with Pulsed-Laser Induced Fragments : Electrical Properties of Condensed Matter
- Energy Beam Irradiation of High-T_c Superconductors Y_1Ba_2Cu_3O_ and Ho_1Ba_2Cu_3O_
- Atomic Migration of Metals in the Interfaces of Au-Si and Ni-Si for Crystalline and Amorphous Si Observed by 40 MeV-O^ Ion Backscattering
- Micromachining of Silica Glass Using EUV Radiation of Laser-Produced Plasma
- Micromachining of Silica Glass Using EUV Radiation of Laser-Produced Plasma (特集 量子ビームによるナノバイオエレクトロニクス)
- Ion-Induced Anger Electrons Emitted from MgO and GaP under Shadowing Conditions
- Anger Electron Emission under Jon-Beam Shadowing Conditions
- Visible Light Emission from SiO_x Films Synthesized by Laser Ablation
- Laser-Induced Backside Wet Etching of Sapphire
- Three Different Forms of Hydrogen Molecules in Silicon
- Hydrogen Molecules in Defective Silicon
- Formation of Hydrogen Molecules in n-Type Silicon
- Hydrogen Passivation of Donors and Hydrogen States in Heavily Doped n-Type Silicon
- Nano- and Microdot Array Formation of FeSi_2 by Nanosecond Excimer Laser-Induced Forward Transfer
- Synthesis and Photolysis of Biphenylenetetracarboxylic Dianhydride in Low-temperature Neon Matrixes
- Fabrication of a Novel Microfluidic Device Incorporating 2-D Array of Microbeads
- Etching a Micro-Trench with a Maximum Aspect Ratio of 60 on Silica Glass by Laser-Induced Backside Wet Etching (LIBWE)
- Resistance of LiCaAlF_6 Single Crystals against F_2 Laser Irradiation
- Thermal Stability of Hg_Cd_xTe Crystals Covered with the Anodic Oxide Films
- Chemical Reaction of Si Nanoparticles during Formation in Gas Phase Observed by a Time-Resolved Photoluminescence Method
- Laser Ablation Synthesis of Hydrogenated Silicon Nanoparticles with Green Photoluminescence in the Gas Phase : Optics and Quantum Electronics
- Increase of 1.5 μm luminescence from Cryogenic Temperature to Room Temperature from Er-doped SiO_2 Films with Si Nanocrystallites Fabricated by Laser Ablation
- Strong Dependence of Hydrogen Passivation on Donor Concentration and on Donor Depth Profile in Silicon
- Shallow Donor Clusters in InP
- Effect of Rapid Solid-Phase Epitaxy of P^+-Implanted Amorphous GaAs and GaAs/Si by Laser Beam Heating
- Electronic Energy Level of Off-Center Substitutional Nitrogen in Silicon: Determination by Electron Spin Resonance Measurements : Electrical Properties Condensed Matter
- Sputtering Phenomenon Induced by Laser-Ablated Particles
- Time-and-Space Resolved X-Ray Absorption Spectroscopy of Laser-Ablated Si Particles
- Nano-Ablation of Inorganic Materials Using Laser Plasma Soft X-rays at around 10 nm
- Direct Etching of Poly(methyl methacrylate) Using Laser Plasma Soft X-rays
- Time-Resolved X-Ray Absorption Spectroscopy for Laser-Ablated Silicon Particles in Xenon Gas
- The Kinetics of Dissolution of Copper and Iron in Aqueous Cupric Ammine Solutions
- Etching a Micro-Trench with a Maximum Aspect Ratio of 60 on Silica Glass by Laser-Induced Backside Wet Etching (LIBWE)
- Formation Mechanism of Interstitial Hydrogen Molecules in Crystalline Silicon
- Isotope Effect of Penetration of Hydrogen and Deuterium into Silicon through Si/SiO2 Interface
- Electronic States of P Donors in Si Nanocrystals Embedded in Amorphous SiO2 Layer Studied by Electron Spin Resonance: Hydrogen Passivation Effects
- Light Emission from Nanometer-Sized Silicon Particles Fabricated by the Laser Ablation Method
- Effect of Annealing on the Tolerance of LiCaAlF6 Single Crystals against F2 Laser Irradiation
- Electron Excitation Memory Induced by Light Irradiation of Hydrogenated Si Nanocrystals Embedded in SiO
- Laser-Induced Backside Wet Etching of Sapphire