Laser-Induced Backside Wet Etching of Sapphire

スポンサーリンク

概要

• 論文の詳細を見る

• Sapphire plates were etched with the approach of laser-induced backside wet etching (LIBWE) using neat toluene or saturated pyrene/acetone solutions as the etching medium. Using this approach, flexible patterns on the scale of 4-μm can be fabricated on the surface of the plates. The etching process was observed in situ by a CCD camera, which revealed the deposition of black particles and the formation thereafter of a laser-absorbing film in the etched area. By Raman spectroscopic analysis, the film was characterized to be amorphous carbon resulting from the decomposition of toluene or pyrene upon laser irradiation, which is an essential factor contributing to the etching process.

• 2003-02-15

著者

• Ding Ximing

  Photoreaction Control Research Center National Institute Of Advanced Industrial Science And Technolo

• Niino Hiroyuki

  Photonic Research Institute National Institute Of Advanced Industrial Science And Technology

• Sato Tadatake

  Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)

• Kawaguchi Yoshizo

  Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)

関連論文

• Improvement in Electrical Conductivity of Indium Tin Oxide Films Prepared via Pulsed Laser Deposition on Electric-Field-Applied Substrates(Optics and Quantum Electronics)
• Micromachining of Silica Glass Using EUV Radiation of Laser-Produced Plasma
• Micromachining of Silica Glass Using EUV Radiation of Laser-Produced Plasma (特集 量子ビームによるナノバイオエレクトロニクス)
• Laser-Induced Backside Wet Etching of Sapphire
• Nano- and Microdot Array Formation of FeSi_2 by Nanosecond Excimer Laser-Induced Forward Transfer
• Synthesis and Photolysis of Biphenylenetetracarboxylic Dianhydride in Low-temperature Neon Matrixes
• Fabrication of a Novel Microfluidic Device Incorporating 2-D Array of Microbeads
• Etching a Micro-Trench with a Maximum Aspect Ratio of 60 on Silica Glass by Laser-Induced Backside Wet Etching (LIBWE)
• Resistance of LiCaAlF_6 Single Crystals against F_2 Laser Irradiation
• Nano-Ablation of Inorganic Materials Using Laser Plasma Soft X-rays at around 10 nm
• Direct Etching of Poly(methyl methacrylate) Using Laser Plasma Soft X-rays
• Etching a Micro-Trench with a Maximum Aspect Ratio of 60 on Silica Glass by Laser-Induced Backside Wet Etching (LIBWE)
• Effect of Annealing on the Tolerance of LiCaAlF6 Single Crystals against F2 Laser Irradiation
• Laser-Induced Backside Wet Etching of Sapphire

もっと見る 閉じる

スポンサーリンク