Magnetophonon Resonance Recombination of Heated Carriers with Emission of Two TA Phonons in LPE-Hg_<1-x>Mn_xTe

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概要

• 論文の詳細を見る

• A systematic study of a new type of magnetophonon effect assccciated with a recom-bination process with emission of two TA phonons is carried out on Hg. .Mn.Te forx=0.25 -1.0% and HgTe, using high-quality l,PE crystals. Magnetophononresonance recombination extrema are observed in the longitudinalmagnetoresistance, which shows dependences on Mn composition, the temperatureand the magnetic field direction relative to the crystallographic orientation. Spin-fliptransition peaks are well resolved and the exchange parameter p is determined as 0.62eV. In the samples with x=0.5%, impurity transitions are detected and an impuritylevel is deduced at (2.080.2) meV above the top of the valence band in a magneticfield. Ills demonstrated that this new type of magnetophonon effect is a powerful toolfor study of the band structure near the band edge in zero-gap semiconductors.

• 社団法人日本物理学会の論文
• 1989-02-15

著者

• Takada Ken-ichi

  Research Institute For Scientific Measurements Tohoku University

• Masuda K

  Univ. Tsukuba Ibaraki

• Masuda Kohzoh

  Institute Of Materials Science University Of Tsukuba Tsukuba Academic City

• Masuda Kohzoh

  Institute Of Materials Science University Of Tsukuba

• TAKITA Koki

  Institute of Materials Science, University of Tsukuba

• Masuda K

  Department Of Physics Faculty Of Science Yamagata University

• UCHINO Takashi

  Institute of Materials Science,University of Tsukuba

• Murakami Kouichi

  Institute Of Materials Science University Of Tsukuba

• Uchino T

  Institute Of Materials Science University Of Tsukuba

• Uchino T

  Insititute For Chemical Research Kyoto University

• Takita K

  Institute Of Materials Science University Of Tsukuba

• Takita K

  Univ. Tsukuba Ibaraki Jpn

• Takita Koki

  Institute For Materials Science University Of Tsukuba

• Uchino Takashi

  Institute Of Materials Science University Of Tsukuba

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