Electron Microscope Study on Commensurate-Incommensurate Phase Transition of Rb_2ZnCl_4 Crystals
スポンサーリンク
概要
- 論文の詳細を見る
Commensurate-incommensurate (C-IC) phase transition of Rb.ZnCl. is studied bylow temperature transmission electron microscopy. Nucleation ?tnd disappearance ofpairs of "dislocations" composed of six discommensurations (DCs) and their mo-lions along the c plane play an important role in the transition prcccess. During the mo-lions rearrangements of "dislocations" due to interactions with neighbouring DCsare observed. On heating from tlae C to the IC phases, small displacements of the DCsalong the direction perpendicular to the DCs produce rather uniform distribution ofthe DCs in the IC phase. On the other hand on cooling, large displacements of theDCs do not take plase in the C phase. In the C phase specimens are divided into tworegions, one with a low DC density and the other with a high DC density. Pinning ofthe DCs and "dislocations" at defects is also observed.
- 社団法人日本物理学会の論文
- 1988-06-15
著者
-
TSUDA Kenji
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
-
Takada Ken-ichi
Research Institute For Scientific Measurements Tohoku University
-
Tsuda K
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
-
Tsuda K
Research Institute For Scientific Measurements Tohoku University
-
Tsuda Kenji
Research Institute For Scientific Measurements Tohoku University
-
Yagi Katsumichi
Physics Department,Tokyo Institute of Technology
-
TSUDA Kazuya
Physics Department,Tokyo Institute of Technology
-
YAMAMOTO Naoki
Physics Department,Tokyo Institute of Technology
-
Yagi Katsumichi
Physics Department Tokyo Institute Of Technology
-
Yamamoto Naoki
Physics Department Tokyo Institute Of Technology
関連論文
- Statistical-Thermodynamic Study of Nonequilibrium Phenomena in Three-Dimensional Anharmonic Crystal Lattices : III. Linear Waves(Condensed Matter : Structure, Mechanical and Thermal Properties)
- Local lattice parameter determination of a silicon (001) layer grown on a sapphire (1102) substrate using convergent-beam electron diffraction
- Lattice parameter determination of a composition controlled Si_Ge_x layer on a Si (001) substrate using convergent-beam electron diffraction
- X-ray and Electron Diffraction Study of a Precipitation Phase in Nd_Ce_CuO_ Single Crystal(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Investigation of the Structure of Single Crystal Sr_3Ru_2O_7 by Neutron and Convergent Beam Electron Diffractions (Condensed Matter: Structure, Mechanical and Thermal Properties)
- Lattice parameter determination of a strained area of an InAs layer on a GaAs substrate using CBED
- Novel Size Effect of LaMnO_ Nanocrystals Embeded in SBA-15 Mesoporous Silica(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Space Group Determination of the Room-Temperature Phase of α'-NaV_2O_5 Using Convergent-Beam Electron : Condensed Matter: Structure, etc.
- Electron Microscope Study of Decagonal Quasicrystals of Al_Ni_Fe_
- Convergent-Beam Electron Diffraction Study of the Low-Temperature Ferromagnetic Insulator Phase of La_Sr_xMnO_3 (x=0.11, 0.12) : Condensed Matter: Structure, etc.
- 22aT-13 High resolution REM study on structures of high index Si surfaces induced by metal deposition
- 21-O-09 High-Temperature Phase Transition in Lanthanum Titanate Perovskites
- Magnetophonon Resonance Recombination of Heated Carriers with Emission of Two TA Phonons in LPE-Hg_Mn_xTe
- Y-Ba-Cu Oxide Films Formed with Pulsed-Laser Induced Fragments : Electrical Properties of Condensed Matter
- Energy Beam Irradiation of High-T_c Superconductors Y_1Ba_2Cu_3O_ and Ho_1Ba_2Cu_3O_
- Space-Group Determination of La_2CuO_ by Conventional and Convergent-Beam Electron Diffraction
- Electron Diffraction Study of the Phase Transformation of α'-NaV_2O_5 : Condensed Matter: Structure, etc.
- Determination of Space Group and Refinement of Structure Parameters for La_2CuO_ Crystals : Condensed Matter
- Three-Dimensional Antiferromagnetic Order and Anisotropic Magnetic Properties in Bi_2CuO_4
- Relation of T_c with Hole Concentration in Ln_Ba_Cu_3O_ (Ln=Sm and Eu); Hall Effect Measurement and Chemical Analysis
- Relation between Superconducting T_c and Hole Concentration: Hall Effect Measurement and Chemical Analysis in Charge-Doped and Oxygen-Doped System Nd_Ba_Cu_3O_ : Electrical Properties of Condensed Matter
- Variation of SUperconducting Properties with Hole Concenntration in the Solid Solution Systems of Sm_Ba_Cu_3O_ and Eu_Ba_Cu_3O_ : Electrical Properties of Condensed Matter
- Correlation of T_c with Hole Concentration in Copper-Oxide Superconductors; Hall Effect Measurement in Nd_Ba_Cu_3O_ : Electrical Properties of Condensed Matter
- Magnetic Quantum Oscillations Due to Auger Recombination and Shockley-Read Recombination Processes in n-Hg_Cd_xTe
- Hole Concentration Compensation Effect and Superconducting Properties of Nd_Ba_Cu_3O_ : Electrical Properties of Condensed Matter
- X-Ray Diffraction Study on the Crystal Structure of Nd_Ba_Cu_3O_ : Electrical Properties of Condensed Matter
- Upper Critical Field and its Anisotropy of EuBa_2Cu_3O_ and GdBa_2Cu_3O_ Studied in Preferentially Oriented Pellets
- Crystal Structure of Ba_2ErCu_3O_ Determined by Neutron Powder Diffraction
- Studies on Anisotropic Upper Critical Fields of HoBa_2Cu_3O_ and ErBa_2Cu_3O_ Using Preferentially Oriented Pellets
- Crystal Structure of the High T_c Superconductor LnBa_2Cu_3O_ (Ln=Sm, Eu and Gd)
- Crystal Structure of Ba_2HoCu_3O_ Determined by Neutron Powder Diffraction
- Anisotropic Upper Critical Fields of Orthorhombic Single Phase YBa_2Cu_3O_ Studied Using Preferentially Oriented Pellets
- Structural Study of an Al_Ni_Fe_ Decagonal Quasicrystal Using High-Angle Annular Dark-Field Scanning Transmission Electron Microscopy
- New Structural Model of an Al_Ni_Co_8 Decagonal Quasicrystal
- Structural Study of an Al_Ni_Co_8 Decagonal Quasicrystal Using the High-Angle Annular Dark-Field Method
- Surface Structures Observed by High-Resolution UHV Electron Microscopy at Atomic Level
- Correlation between Superconducting Transition Temperature T_c and Increase of Nuclear Spin-Lattice Relaxation Rate Devided by Temperature 1/T_1T at T_c in the Hydrate Cobaltate Na_xCoO_2・yH_2O(Condensed Matter : Electronic Structure, Electrical, Magnetic
- Unconventional Superconductivity and Nearly Ferromagnetic Spin Fluctuations in Na_xCoO_2・_yH_2O(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Statistical-Thermodynamic Study of Nonequilibrium Phenomena in Three-Dimensional Anharmonic Crystal Lattices : III. Linear Waves
- Image Conservation in Inelastically Scattered Electrons in Reflection Electron Microscopy
- Energy-filtered Electron Interferometry in Reflection Electron Microscopy
- Direct Current Heating Induced Giant Step Bunching and Wandering on Si(111) and (001) Vicinal Surfaces
- Ultra High Vacuum Reflection Electron Microscopy Study of Step-Dislocation Interaction on Si(111) Surface
- UHV-TEM-REM Studies of Si(111) Surfaces
- A New Technique to Produce Clean and Thin Silicon Films In Situ in a UHV Electron Microscope for TEM-TED Studies of Surfaces
- Atomic Resolution TEM Images of the Au(001) Reconstructed Surface
- Epitaxy of Au and Ag on Cleaved (10, 0) Surface of MoS_2 : Surfaces, Interfaces and Films
- Electron Microscope Study on Commensurate-Incommensurate Phase Transition of Rb_2ZnCl_4 Crystals
- High Voltage Electron Microscope Study of Incommensurate Phase in Quartz
- Simulations of Kikuchi patterns due to thermal diffuse scattering on MgO crystals
- Direct Observation of Al_xGa_As/GaAs Superlattices by REM
- An Ion-Sputtering Gun to Clean Crystal Surfaces In-Situ in an Ultra-High-Vacuum Electron Microscope
- Electron Beam Evaporator for In Situ Deposition Studies of Refractory Metal Thin Films in UHV Electron Microscope
- Contrast of Closely Spaced Misfit Dislocations
- On the Growth Feature of Sn Deposit on SnTe Substrate
- Reflection Electron Microscope Observations of Dislocations and Surface Structure Phase Transition on Clean (111) Silicon Surfaces
- Interferometry by Coherent Convergent-Beam Electron Diffraction
- Preferential Diffusion of Vacancies Perpendicular to the Dimers on Si(001)2 × 1 Surfaces Studied by UHV REM
- REM Observation on Conversion between Single-Domain Surfaces of Si(001) 2 × 1 and 1 × 2 Induced by Specimen Heating Current
- Energy-filtered Electron Interferometry in Reflection Electron Microscopy
- High-Resolution Reflection Electron Microscopy of Si(111)$7\times 7$ Surfaces Using a High-Voltage Electron Microscope