Reflection Electron Microscope Observations of Dislocations and Surface Structure Phase Transition on Clean (111) Silicon Surfaces
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概要
- 論文の詳細を見る
A recently reported surface study by means of ultra-high-vacuum reflection electron microscopy (Osakabe et al. : Surf. Sci. in press) was extended to further details of clean (111) silicon surfaces. A screw dislocation emergent at the surface was clearly identified as the place at which one surface step terminates with a characteristic line contrast. In the transformation between the (7×7) and (1×1) surface structures across 830℃, the surface steps act as nucleation sites : on cooling the (7×7) structure nucleates at the upper edge of the steps and grows along the upper terraces, while on heating the reversed process takes place.
- 社団法人応用物理学会の論文
- 1980-06-05
著者
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Osakabe Nobuyuki
Physics Department Tokyo Institute Of Technology
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Honjo Goro
Physics Department Tokyo Institute Of Technology
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Yagi Katsumichi
Physics Department Tokyo Institute Of Technology
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