High-Resolution Reflection Electron Microscopy of Si(111)$7\times 7$ Surfaces Using a High-Voltage Electron Microscope

概要

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High-resolution reflection electron microscope (REM) observations of Si(111)$7\times 7$ surfaces have been carried out by means of an ultra-high-vacuum 1 MV microscope. An advantage to the use the high-resolution 1 MV microscope is the reduction of resolution degradation due to chromatic aberration. When the observations are carried out along the [$1\bar{1}0$] direction, 2.3 nm lattice fringes of the $7\times 7$ unit cell size are observed. When several beams are included in the objective aperture, finer fringes, i.e., three fringes and seven fringes in 2.3 nm, are observed. The fact that the former fine fringes are frequently observed instead of half-spacing fringes of the 2.3 nm fringes seems to suggest that the fringes reflect the $7\times 7$ reconstructed structure. The latter fine fringes are the narrowest fringes with spacing of 0.33 nm so far recorded in REM. When Au is deposited to form the $5\times 2$ adsorbate structure, fringes of the half spacing of the 5 period are recorded. This may reflect the adsorbate structure, a conclusive model of which has not been reported.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
1989-05-20