Preferential Diffusion of Vacancies Perpendicular to the Dimers on Si(001)2 × 1 Surfaces Studied by UHV REM
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概要
- 論文の詳細を見る
This paper describes anisotropic diffusion of vacancies on Si(001)2 × 1 surfaces studied by reflection electron microscopy. Vacancies were introduced uniformly on surface terraces of rectangular 2 × 1 and 1 × 2 domains of similar size by exposure to oxygen at 10^<-8> Torr at 700℃. The longer sides of the 2 × 1 and 1 × 2 domains were perpendicular and parallel to the dimer direction, respectively. It was observed that hollows were nucleated by coalescence of the vacancies preferably in the 2 × 1 domains. This was due to anisotropy of vacancy diffusion which caused different vacancy concentrations in the two domains. This fact indicates that easy diffusion of the vacancies is perpendicular to the dimer direction.
- 社団法人応用物理学会の論文
- 1989-06-20
著者
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Yagi Katsumichi
Physics Department Tokyo Institute Of Technology
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Kahata Hisatoshi
Physics Department Tokyo Institute Of Technology
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