Ultra High Vacuum Reflection Electron Microscopy Study of Step-Dislocation Interaction on Si(111) Surface

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-10-15

著者

• Minoda Hiroki

  Physics Department,Tokyo Institute of Technology

• Yagi Katsumichi

  Physics Department,Tokyo Institute of Technology

• TANISHIRO Yasumasa

  Physics Department, Tokyo Institute of Technology

• Tanishiro Y

  Physics Department Tokyo Institute Of Technology

• LATYSHEV Alexander

  Physics Department, Tokyo Institute of Technology

• Yagi K

  Physics Department Tokyo Institute Of Technology Oh-okayama

• Minoda Hiroki

  Physics Department Tokyo Institute Of Technology

• Tanishiro Yasumasa

  Physics Department Tokyo Institute Of Technology

• Yagi Katsumichi

  Physics Department Tokyo Institute Of Technology

• Latyshev Alexander

  Physics Department Tokyo Institute Of Technology:institute Of Semiconductor Physics Russian Academy

関連論文

• 22aT-13 High resolution REM study on structures of high index Si surfaces induced by metal deposition
• Fabrication of Gold Nanowires Using Contact Mode Atomic Force Microscope
• Surface Structures Observed by High-Resolution UHV Electron Microscopy at Atomic Level
• Image Conservation in Inelastically Scattered Electrons in Reflection Electron Microscopy
• New Phase Diagram of Step Instabilities on Si(111) Vicinal Surfaces Induced by DC Annealing : Condensed Matter: Structure, etc.
• Energy-filtered Electron Interferometry in Reflection Electron Microscopy
• Design features of a new ultra-high vacuum electron microscope with an omega filter
• Direct Current Heating Induced Giant Step Bunching and Wandering on Si(111) and (001) Vicinal Surfaces
• Ultra High Vacuum Reflection Electron Microscopy Study of Step-Dislocation Interaction on Si(111) Surface
• UHV-TEM-REM Studies of Si(111) Surfaces
• A New Technique to Produce Clean and Thin Silicon Films In Situ in a UHV Electron Microscope for TEM-TED Studies of Surfaces
• Monolayer and Bilayer High Steps on Si(001)2×1 Vicinal Surface
• Biatomic Layer-High Steps on Si(001)2×1 Surface
• Atomic Resolution TEM Images of the Au(001) Reconstructed Surface
• Epitaxy of Au and Ag on Cleaved (10, 0) Surface of MoS_2 : Surfaces, Interfaces and Films
• Electron Microscope Study on Commensurate-Incommensurate Phase Transition of Rb_2ZnCl_4 Crystals
• An Ion-Sputtering Gun to Clean Crystal Surfaces In-Situ in an Ultra-High-Vacuum Electron Microscope
• Electron Beam Evaporator for In Situ Deposition Studies of Refractory Metal Thin Films in UHV Electron Microscope
• Contrast of Closely Spaced Misfit Dislocations
• On the Growth Feature of Sn Deposit on SnTe Substrate
• Reflection Electron Microscope Observations of Dislocations and Surface Structure Phase Transition on Clean (111) Silicon Surfaces
• Preferential Diffusion of Vacancies Perpendicular to the Dimers on Si(001)2 × 1 Surfaces Studied by UHV REM
• Fabrication of Gold Nanowires Using Contact Mode Atomic Force Microscope
• REM Observation on Conversion between Single-Domain Surfaces of Si(001) 2 × 1 and 1 × 2 Induced by Specimen Heating Current
• Energy-filtered Electron Interferometry in Reflection Electron Microscopy
• High-Resolution Reflection Electron Microscopy of Si(111)$7\times 7$ Surfaces Using a High-Voltage Electron Microscope

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