New Phase Diagram of Step Instabilities on Si(111) Vicinal Surfaces Induced by DC Annealing : Condensed Matter: Structure, etc.

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概要

• 論文の詳細を見る

• On Si(111) vicinal surfaces, step bunching is observed when the sample is annealed with a direct current (DC). It is also known that the DC direction that induces step bunching changes three times with the increase of temperature. Recently it was found that this step bunching instability takes place on Si(111) vicinal surfaces with off-angles up to 13-14° [Jpn. J. Appl. Phys. 38 (1999) L308]. Temperature and off-angle dependence of the step instabilities are studied. Results show that the transition depends on the off-angle (mean step-step distance). It was also found that the off-angle dependence for a step-down current and a step-up current differs.

• 社団法人日本物理学会の論文
• 2001-04-15

著者

• Minoda Hiroki

  Physics Department,Tokyo Institute of Technology

• TANISHIRO Yasumasa

  Physics Department, Tokyo Institute of Technology

• Degawa Masashi

  Physics Department Tokyo Institute Of Technology Oh-okayama:(present) Department Of Physics Universi

• Tanishiro Y

  Physics Department Tokyo Institute Of Technology

• YAGI Katumichi

  Physics Department, Tokyo Institute of Technology, Oh-okayama

• Yagi K

  Physics Department Tokyo Institute Of Technology Oh-okayama

• Minoda Hiroki

  Physics Department Tokyo Institute Of Technology

• Tanishiro Yasumasa

  Physics Department Tokyo Institute Of Technology

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