Surface Structures Observed by High-Resolution UHV Electron Microscopy at Atomic Level
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概要
- 論文の詳細を見る
- 1987-06-20
著者
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Yagi Katsumichi
Physics Department,Tokyo Institute of Technology
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TAKAYANAGI Kunio
Physics Department, Tokyo Institute of Technology
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Takayanagi Kunio
Physics Department Tokyo Institute Of Technology
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TANISHIRO Yasumasa
Physics Department, Tokyo Institute of Technology
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Tanishiro Y
Physics Department Tokyo Institute Of Technology
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K0BAYASHI Kunio
Physics Department, Tokyo Institute of Technology
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AKIYAMA Kazuhiro
Physics Department, Tokyo Institute of Technology
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K0bayashi Kunio
Physics Department Tokyo Institute Of Technology
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Akiyama Kazuhiro
Physics Department Tokyo Institute Of Technology
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Tanishiro Yasumasa
Physics Department Tokyo Institute Of Technology
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Yagi Katsumichi
Physics Department Tokyo Institute Of Technology
関連論文
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- Surface Structures Observed by High-Resolution UHV Electron Microscopy at Atomic Level
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- New Phase Diagram of Step Instabilities on Si(111) Vicinal Surfaces Induced by DC Annealing : Condensed Matter: Structure, etc.
- Energy-filtered Electron Interferometry in Reflection Electron Microscopy
- Design features of a new ultra-high vacuum electron microscope with an omega filter
- Direct Current Heating Induced Giant Step Bunching and Wandering on Si(111) and (001) Vicinal Surfaces
- Ultra High Vacuum Reflection Electron Microscopy Study of Step-Dislocation Interaction on Si(111) Surface
- UHV-TEM-REM Studies of Si(111) Surfaces
- A New Technique to Produce Clean and Thin Silicon Films In Situ in a UHV Electron Microscope for TEM-TED Studies of Surfaces
- Monolayer and Bilayer High Steps on Si(001)2×1 Vicinal Surface
- Biatomic Layer-High Steps on Si(001)2×1 Surface
- Atomic Resolution TEM Images of the Au(001) Reconstructed Surface
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- Contrast of Closely Spaced Misfit Dislocations
- On the Growth Feature of Sn Deposit on SnTe Substrate
- Reflection Electron Microscope Observations of Dislocations and Surface Structure Phase Transition on Clean (111) Silicon Surfaces
- Preferential Diffusion of Vacancies Perpendicular to the Dimers on Si(001)2 × 1 Surfaces Studied by UHV REM
- Fabrication of Gold Nanowires Using Contact Mode Atomic Force Microscope
- REM Observation on Conversion between Single-Domain Surfaces of Si(001) 2 × 1 and 1 × 2 Induced by Specimen Heating Current
- Energy-filtered Electron Interferometry in Reflection Electron Microscopy
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