A Liquid Encapsulated Laser Recrystallization for Silicon-on-Insulator Structures
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概要
- 論文の詳細を見る
Seedless recrystallization of capped and uncapped silicon-on-insulator structures has been demonstrated using a new fabrication method in which the conventional laser melting technique was combined with a liquid encapsulating technique. Substantial increase in the grain size was observed in polycrystalline silicon films fabricated by the new method. The stabilization of the recrystallization process was likely due to features of the liquid encapsulation technique: i.e., effective heat release from the surface of molten silicon, resulting in control of vertical temperature profile.
- 社団法人応用物理学会の論文
- 1989-01-20
著者
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Namba Susumu
Frontier Research Program Riken
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Doi Atsutoshi
Department Of Electrical Engineering Kinki University
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Doi Atsutoshi
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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ASAKAWA Toshifumi
Ricoh Co. Ltd.
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Asakawa Toshifumi
Ricoh Co. Ltd.:(present Address)neural Systems Co. Ltd.
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Namba Susumu
Frontier Research Programs The Institute Of Physical And Chemical Research
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