Reduction of Textural Drift in a Laser Recrystallized Silicon-on-Insulator Structure Employing Liquid Encapsulation
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-06-20
著者
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Meguro Takashi
Laser Science Group The Institute Of Physical And Chemical Research
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Aoyagi Yoshinobu
Laser Science Group The Institute Of Physical And Chemical Research
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Doi Atsutoshi
Department Of Electrical Engineering Kinki University
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Doi Atsutoshi
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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MEGURO Takashi
Laser Science Group, The Institute of Physical and Chemical Research
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DOI Atsutoshi
Department of Electrical Engineering, Kinki Univetsity
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AOYAGI Yoshinobu
Laser Science Group, The Institute of Physical and Chemical Research
関連論文
- Reduction of Textural Drift in a Laser Recrystallized Silicon-on-Insulator Structure Employing Liquid Encapsulation
- Enhanced Diffusion of Ion Implanted Sb in Silicon
- A Growth Analysis for Metalorganic Vapor Phase Epitaxy of GaAs : Semiconductors and Semiconductor Devices
- A Liquid Encapsulated Laser Recrystallization for Silicon-on-Insulator Structures
- Design of an Ultrahigh-Gain Ni-like Kr Soft-X-Ray Laser by Use of an Optical-Field-Induced Ionization-Initiated Transient Collisional Excitation Scheme