Low-Temperature Substrate Annealing of Vicinal Si(100) for Epitaxial Growth of GaAs on Si
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概要
- 論文の詳細を見る
Effects of atomic hydrogen irradiation on vicinal Si(100) surfaces have been investigated by reflection high-energy electron diffraction (RHEED) and scanning tunneling microscope (STM) observations. Interplay of the two different Si hydride phases and dynamic changes in the surface reconstruction have been observed and studied in detail. It has also been shown that removal of oxide from Si surface and a single-domain (2×1) Si surface can be obtained at annealing temperatures below 750℃ with atomic hydrogen irradiation, much lower than those usually required for the conventional thermal treatment methods.
- 社団法人応用物理学会の論文
- 1991-12-30
著者
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Kawabe M
Nikko Materials Co. Ltd. Saitama Jpn
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Kawabe Mitsuo
Institute Of Applied Physics University Of Tsukuba
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Okada Y
Sumitomo Heavy Ind. Ltd. Tokyo Jpn
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Okada Y
Institute Of Applied Physics. University Of Tsukuba
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Okada Yoshitaka
Institute Of Applied Physics University Of Tsukuba
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Kawabe M
Institute Of Applied Physics University Of Tsukuba
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SHIMOMURA Hirofumi
Institute of Materials Science, University of Tsukuba
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Sugaya Takeyoshi
Institute Of Materials Science University Of Tsukuba
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Sugaya T
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
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Shimomura H
Institute Of Materials Science University Of Tsukuba
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