Shimomura H | Institute Of Materials Science University Of Tsukuba
スポンサーリンク
概要
関連著者
-
Kawabe M
Nikko Materials Co. Ltd. Saitama Jpn
-
Kawabe Mitsuo
Institute Of Applied Physics University Of Tsukuba
-
Okada Y
Sumitomo Heavy Ind. Ltd. Tokyo Jpn
-
Okada Y
Institute Of Applied Physics. University Of Tsukuba
-
Okada Yoshitaka
Institute Of Applied Physics University Of Tsukuba
-
Kawabe M
Institute Of Applied Physics University Of Tsukuba
-
SHIMOMURA Hirofumi
Institute of Materials Science, University of Tsukuba
-
Shimomura H
Institute Of Materials Science University Of Tsukuba
-
Bando Y
Advanced Materials Laboratory And Nanomaterials Laboratory National Institute For Materials Science
-
Bando Yoshio
National Institute Of Materials Science
-
Kawabe Mitsuo
Institute Of Materials Science University Of Tsukuba
-
OKADA Yoshitaka
Institute of Applied Physics. University of Tsukuba
-
Bando Y
National Inst. Res. Inorganic Materials Tsukuba Jpn
-
KITAMI Yoshizo
National Institute for Research in Inorganic Materials
-
MATSUMOTO Hisashi
Institute of Materials Science, University of Tsukuba
-
Kitami Y
National Institute For Materials Science
-
Bando Yoshio
National Institute For Materials Science Advanced Materials Laboratory
-
Bando Yoshio
International Center For Materials Nanoarchitectonics National Institute For Materials Science (nims
-
Sugaya Takeyoshi
Institute Of Materials Science University Of Tsukuba
-
Sugaya T
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
-
Bando Yoshio
Advanced Materials Laboratory And Nanomaterials Laboratory National Institute For Materials Science
-
Bando Yoshio
Advanced Materials Laboratory National Institute For Materials Science
-
Matsumoto Hisashi
Institute Of Materials Science University Of Tsukuba
-
KITAMI Yoshizo
National Institute for Materials Science
著作論文
- Reduction Mechanism of Dislocation Density in GaAs Films on Si Substrates
- Atomic Image Observation of Hydrogen-Saturated Si(100) Prepared by Atomic Hydrogen Irradiation
- Low Dislocation Density GaAs on Vicinal Si(100) Grown by Molecular Beam Epitaxy with Atomic Hydrogen Irradiation
- Low-Temperature Substrate Annealing of Vicinal Si(100) for Epitaxial Growth of GaAs on Si