Shimomura H | Institute Of Materials Science University Of Tsukuba

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概要

• 同名の論文著者
• Institute Of Materials Science University Of Tsukubaの論文著者

関連著者

• Kawabe M

  Nikko Materials Co. Ltd. Saitama Jpn

• Kawabe Mitsuo

  Institute Of Applied Physics University Of Tsukuba

• Okada Y

  Sumitomo Heavy Ind. Ltd. Tokyo Jpn

• Okada Y

  Institute Of Applied Physics. University Of Tsukuba

• Okada Yoshitaka

  Institute Of Applied Physics University Of Tsukuba

• Kawabe M

  Institute Of Applied Physics University Of Tsukuba

• SHIMOMURA Hirofumi

  Institute of Materials Science, University of Tsukuba

• Shimomura H

  Institute Of Materials Science University Of Tsukuba

• Bando Y

  Advanced Materials Laboratory And Nanomaterials Laboratory National Institute For Materials Science

• Bando Yoshio

  National Institute Of Materials Science

• Kawabe Mitsuo

  Institute Of Materials Science University Of Tsukuba

• OKADA Yoshitaka

  Institute of Applied Physics. University of Tsukuba

• Bando Y

  National Inst. Res. Inorganic Materials Tsukuba Jpn

• KITAMI Yoshizo

  National Institute for Research in Inorganic Materials

• MATSUMOTO Hisashi

  Institute of Materials Science, University of Tsukuba

• Kitami Y

  National Institute For Materials Science

• Bando Yoshio

  National Institute For Materials Science Advanced Materials Laboratory

• Bando Yoshio

  International Center For Materials Nanoarchitectonics National Institute For Materials Science (nims

• Sugaya Takeyoshi

  Institute Of Materials Science University Of Tsukuba

• Sugaya T

  Photonics Research Institute National Institute Of Advanced Industrial Science And Technology

• Bando Yoshio

  Advanced Materials Laboratory And Nanomaterials Laboratory National Institute For Materials Science

• Bando Yoshio

  Advanced Materials Laboratory National Institute For Materials Science

• Matsumoto Hisashi

  Institute Of Materials Science University Of Tsukuba

• KITAMI Yoshizo

  National Institute for Materials Science

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著作論文

• Reduction Mechanism of Dislocation Density in GaAs Films on Si Substrates
• Atomic Image Observation of Hydrogen-Saturated Si(100) Prepared by Atomic Hydrogen Irradiation
• Low Dislocation Density GaAs on Vicinal Si(100) Grown by Molecular Beam Epitaxy with Atomic Hydrogen Irradiation
• Low-Temperature Substrate Annealing of Vicinal Si(100) for Epitaxial Growth of GaAs on Si

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