Photoluminescence of Al_xGa_<1-x>As/Al_yGa_<1-y>As Multiguantum Wells Grown by Pulsed Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
Multiquantum wells (MQW) with a structure of Al_xGa_<1-x>As/Al_yGa_<1-y>As were grown by pulsed molecular beam epitaxy in order to raise the emission energy in MQW of the AlGaAs system. Sharp photoluminescence spectra indicate the high quality of MQW structure and the peak emission energy agreed with the calculated value of n=1 electron and hole transition.
- 社団法人応用物理学会の論文
- 1983-02-20
著者
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Kawabe Mitsuo
Institute Of Materials Science University Of Tsukuba
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Kawabe Mitsuo
Institute Of Applied Physics University Of Tsukuba
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MATSUURA Nobuyuki
Institute of Materials Science, University of Tsukuba
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Yamamoto Kenya
Institute Of Materials Science University Of Tsukuba
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Matsuura Nobuyuki
Institute Of Materials Science University Of Tsukuba
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KONDO Masahumi
Institute of Materials Science, University of Tsukuba
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Kondo Masahumi
Institute Of Materials Science University Of Tsukuba
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