Nanoscale Mapping of Built-in Potential in GaAs p–n Junction Using Light-Modulated Scanning Tunneling Microscopy
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概要
- 論文の詳細を見る
Surface photovoltage (SPV) was visualized over the interface of a GaAs p–n junction using light modulated scanning tunneling spectroscopy. Spatially resolved SPV includes information about the built-in potential of the p–n junction as well as the photo-induced relaxation of tip-induced band bending. These two components were separately evaluated, and mapping of the built-in potential was accomplished on the nanoscale.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-07-25
著者
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Okada Yoshitaka
Institute Of Applied Physics University Of Tsukuba
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Takeuchi Osamu
Institute Of Applied Physics And 21st Coe University Of Tsukuba
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Shigekawa Hidemi
Institute Of Applied Physics And 21st Coe University Of Tsukuba
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Yoshida Shoji
Institute Of Applied Physics Crest University Of Tsukuba
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Oshima Ryuji
Institute Of Applied Physics University Of Tsukuba
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Okada Yoshitaka
Institute of Applied Physics, CREST-JST, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Kanitani Yuya
Institute of Applied Physics, CREST-JST, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Oshima Ryuji
Institute of Applied Physics, CREST-JST, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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