Oshima Nagayasu | Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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概要
- Oshima Nagayasuの詳細を見る
- 同名の論文著者
- Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japanの論文著者
関連著者
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Oshima Nagayasu
Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Suzuki Ryoichi
Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Suzuki Ryoichi
Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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Ishibashi Shoji
Nanosystem Research Institute (NRI) "RICS", AIST, Tsukuba, Ibaraki 305-8568, Japan
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Uedono Akira
Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Eguchi Kazuhiro
Semiconductor Company Toshiba Corporation
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Yoshimaru Masaki
Semiconductor R&d Division Semiconductor Business Group Oki Electric Industry Co. Ltd.
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Uedono Akira
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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Inoue Naoya
Semiconductor Technology Academic Research Center, Kohoku, Yokohama 222-0033, Japan
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Hayashi Yoshihiro
Semiconductor Technology Academic Research Center, Kohoku, Yokohama 222-0033, Japan
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Hirose Yukinori
Semiconductor Technology Academic Research Center, Kohoku, Yokohama 222-0033, Japan
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Nakamura Tomoji
Semiconductor Technology Academic Research Center, Kohoku, Yokohama 222-0033, Japan
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Oshima Nagayasu
Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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Ohdaira Toshiyuki
Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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Nakamura Tomoji
Semiconductor Technology Academic Research Center, 17-2 Shin Yokohama 3-chome, Kohoku, Yokohama 222-0033, Japan
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Yoshimaru Masaki
Semiconductor Technology Academic Research Center, Kohoku, Yokohama 222-0033, Japan
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Eguchi Kazuhiro
Semiconductor Technology Academic Research Center, Kohoku, Yokohama 222-0033, Japan
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Ishibashi Shoji
Nanosystem Research Institute (NRI) ``RICS'', National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Moriya Tsuyoshi
Tokyo Electron Ltd., Minato, Tokyo 107-6325, Japan
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Tsutsui Takuro
Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Kimura Shogo
Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Matsui Hidefumi
Tokyo Electron Ltd., Minato, Tokyo 107-6325, Japan
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Narushima Masaki
Tokyo Electron Ltd., Minato, Tokyo 107-6325, Japan
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Ishikawa Yoichi
Tokyo Electron Ltd., Minato, Tokyo 107-6325, Japan
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Graf Michael
TEL Epion Inc., Billerica, MA 01821, U.S.A.
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Yamashita Koji
TEL Epion Inc., Billerica, MA 01821, U.S.A.
著作論文
- Vacancy-Type Defects Introduced by Gas Cluster Ion-Implantation on Si Studied by Monoenergetic Positron Beams
- Characterization of Low-$k$/Cu Damascene Structures Using Monoenergetic Positron Beams
- Positron Annihilation Spectroscopy on Nitride-Based Semiconductors