Vacancy-Type Defects Introduced by Gas Cluster Ion-Implantation on Si Studied by Monoenergetic Positron Beams
スポンサーリンク
概要
著者
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Ishibashi Shoji
Nanosystem Research Institute (NRI) "RICS", AIST, Tsukuba, Ibaraki 305-8568, Japan
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Oshima Nagayasu
Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Uedono Akira
Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Suzuki Ryoichi
Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Moriya Tsuyoshi
Tokyo Electron Ltd., Minato, Tokyo 107-6325, Japan
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Tsutsui Takuro
Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Kimura Shogo
Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Matsui Hidefumi
Tokyo Electron Ltd., Minato, Tokyo 107-6325, Japan
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Narushima Masaki
Tokyo Electron Ltd., Minato, Tokyo 107-6325, Japan
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Ishikawa Yoichi
Tokyo Electron Ltd., Minato, Tokyo 107-6325, Japan
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Graf Michael
TEL Epion Inc., Billerica, MA 01821, U.S.A.
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Yamashita Koji
TEL Epion Inc., Billerica, MA 01821, U.S.A.
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- Vacancy-Type Defects Introduced by Gas Cluster Ion-Implantation on Si Studied by Monoenergetic Positron Beams
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