Ishibashi Shoji | Nanosystem Research Institute (NRI) "RICS", AIST, Tsukuba, Ibaraki 305-8568, Japan
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概要
- Ishibashi Shojiの詳細を見る
- 同名の論文著者
- Nanosystem Research Institute (NRI) "RICS", AIST, Tsukuba, Ibaraki 305-8568, Japanの論文著者
関連著者
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Ishibashi Shoji
Nanosystem Research Institute (NRI) "RICS", AIST, Tsukuba, Ibaraki 305-8568, Japan
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Seo Hitoshi
Condensed Matter Theory Laboratory, RIKEN, Wako, Saitama 351-0198, Japan
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Terakura Kiyoyuki
Nanosystem Research Institute (NRI) "RICS", National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Oshima Nagayasu
Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Uedono Akira
Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Suzuki Ryoichi
Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Tsuchiizu Masahisa
Department Of Physics Nagoya University
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Omori Yukiko
Department Of Physics Nagoya University
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Bonnet Marie-laure
Department Of Physics Nagoya University:laboratoire De Chimie Ecole Normale Superieure De Lyon Umr 5
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Terakura Kiyoyuki
Research Center For Integrated Science (rcis) Japan Advanced Institute Of Science And Technology (ja
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Suzumura Yoshikazu
Department Of Physics Faculty Of Science Tohoku University
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Bonnet Marie-Laure
Department of Physics, Nagoya University, Nagoya 464-8602, Japan
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Suzuki Ryoichi
Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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Robert Vincent
Université de Lyon, Laboratoire de Chimie, Ecole Normale Supérieure de Lyon, CNRS, F-69364 Lyon, France
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Ishibashi Shoji
Nanosystem Research Institute (NRI) ``RICS'', AIST, Tsukuba, Ibaraki 305-8568, Japan
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Ishibashi Shoji
Nanosystem Research Institute (NRI) ``RICS'', AIST, Tsukuba, Ibaraki 305-8568, Japan
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Miyake Takashi
Nanosystem Research Institute (NRI) "RICS", AIST, Tsukuba, Ibaraki 305-8568, Japan
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Kosugi Taichi
Nanosystem Research Institute (NRI) "RICS", AIST, Tsukuba, Ibaraki 305-8568, Japan
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Terakura Kiyoyuki
Research Center for Integrated Science (RCIS), JAIST, Nomi, Ishikawa 923-1292, Japan
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Robert Vincent
Université de Lyon, Laboratoire de Chimie, Ecole Normale Supérieure de Lyon, CNRS, F-69364 Lyon, France
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Fukuyama Hidetoshi
Department of Applied Physics and Research Institute for Science and Technology, Tokyo University of Science, Shinjuku, Tokyo 162-8601, Japan
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Terakura Kiyoyuki
Nanosystem Research Institute (NRI) ``RICS'', AIST, Tsukuba, Ibaraki 305-8568, Japan
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Otsuka Yuichi
Advanced Institute for Computational Science, RIKEN, Kobe 650-0047, Japan
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Ishibashi Shoji
Nanosystem Research Institute (NRI) ``RICS'', National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Moriya Tsuyoshi
Tokyo Electron Ltd., Minato, Tokyo 107-6325, Japan
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Tsutsui Takuro
Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Kimura Shogo
Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Matsui Hidefumi
Tokyo Electron Ltd., Minato, Tokyo 107-6325, Japan
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Narushima Masaki
Tokyo Electron Ltd., Minato, Tokyo 107-6325, Japan
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Ishikawa Yoichi
Tokyo Electron Ltd., Minato, Tokyo 107-6325, Japan
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Graf Michael
TEL Epion Inc., Billerica, MA 01821, U.S.A.
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Yamashita Koji
TEL Epion Inc., Billerica, MA 01821, U.S.A.
著作論文
- First-Principles Study of Polarizability Distributions for LaAlO3/SrTiO3 Superlattices
- Multi-Orbital Molecular Compound (TTM-TTP)I3: Effective Model and Fragment Decomposition
- Electronic Structure of Novel Superconductor Ca4Al2O6Fe2As2
- Vacancy-Type Defects Introduced by Gas Cluster Ion-Implantation on Si Studied by Monoenergetic Positron Beams
- Electronic States of Single-Component Molecular Conductors [M(tmdt)
- Positron Annihilation Spectroscopy on Nitride-Based Semiconductors