Sugiura Jun | Device Development Center Hitachi Ltd.

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概要

• 同名の論文著者
• Device Development Center Hitachi Ltd.の論文著者

関連著者

• Sugiura Jun

  Device Development Center Hitachi Ltd.

• Ogasawara Makoto

  Device Development Center Hitachi Ltd.

• Tanigawa Shoichiro

  Institute Of Applied Physics University Of Tsukuba

• Uedono Akira

  Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan

• TANIGAWA Shoichiro

  Institute of Materials Science, The University of Tsukuba

• UEDONO Akira

  Institute of Materials Science, University of Tsukuba

• Ogasawara M

  Hitachi Ltd. Tokyo Jpn

• SUGIURA Jun

  Device Development Center, Hitachi Ltd.

• OGASAWARA Makoto

  Device Development Center, Hitachi Ltd.

• Shouguchi Junko

  Department Of Life Science Faculty Of Bioscience And Biotechnology Tokyo Institute Of Technology

• Ogasawara M

  Pioneer Corp. Saitama Jpn

• Kametani Hitoshi

  General Research Laboratory Mitubishi Electric Corporation

• KONDO Hitoshi

  Institute of Materials Science,University of Tsukuba

• WEI Long

  Institute of Materials Science, University of Tsukuba

• DOSHO Chisei

  Institute of Materials Science, University of Tsukuba

• Wei Long

  Institute Of Materials Science University Of Tsukuba

• Dosho Chisei

  Institute Of Materials Science University Of Tsukuba

• Kondo H

  Nikon Corp.

• Kondo Hitoshi

  Institute Of Materials Science University Of Tsukuba

• UEDONO Akira

  Institute of Materials Science, University of Tsukuba:(Present address)Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo

• UEDONO Akira

  Institute of Materials Science, University of Tsukuba:(Present address)Department of Physics, Yokohama City University

• TANIGAWA Shoichiro

  Institute of Materials Science, University of Tsukuba

• KONDO Hitoshi

  Institute of Materials Science, University of Tsukuba

• Uedono Akira

  Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305

• Tanigawa Shoichiro

  Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305

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著作論文

• Defect Production in Phosphorus Ion-Implanted SiO_2(43 nm)/Si Studied by a Variable-Energy Positron Beam
• Vacancy-Type Defects in As^+-Implanted SiO_2(43 nm)/Si Proved with Slow Positrons
• A Study of Vacancy-Type Defects in B+-Implanted SiO2/Si by a Slow Positron Beam

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