First-Principles Calculations of Schottky Barrier Heights of Monolayer Metal/6H-SiC{0001} Interfaces
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概要
- 論文の詳細を見る
- Japan Institute of Metalsの論文
- 2006-11-20
著者
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KOHYAMA Masanori
Research Institute for Ubiquitous Energy Devices (UBIQEN)
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Ishibashi Shoji
Research Institute For Computational Sciences National Institute Of Advanced Industrial Science And
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Ishibashi Shoji
Research Institute For Computational Sciences (rics) National Institute Of Advanced Industrial Scien
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Tamura Tomoyuki
Research Institute For Computational Sciences National Institute Of Advanced Industrial Science And
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Tanaka Shingo
Research Institute For Ubiquitous Energy Devices National Institute Of Advanced Industrial Science A
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Tanaka Shingo
Research Institute For Ubiquitous Energy Devices National Institute Of Advanced Industrial Science A
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Kohyama Masanori
Research Institute For Ubiquitous Energy Devices National Institute Of Advanced Industrial Science A
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Okazaki Kazuyuki
Research Institute For Ubiquitous Energy Devices National Institute Of Advanced Industrial Science A
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Kohyama Masanori
Research Institute For Ubiquitous Energy Devices National Institute Of Advanced Industrial Science A
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Tamura Tomoyuki
Research Institute For Computational Sciences National Institute Of Advanced Industrial Science And
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Ishibashi Shoji
Research Institute For Computational Sciences National Institute Of Advanced Industrial Science And
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TAMURA Tomoyuki
Research Institute for Computational Sciences (RICS), National Institute of Advanced Industrial Science and Technology (AIST)
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- PREFACE
- First-Principles Calculations of Schottky Barrier Heights of Monolayer Metal/6H-SiC{0001} Interfaces
- Ab Initio Electronic-Structure Calculations for α-(BEDT-TTF)_2I_3
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