Ab Initio Electronic-Structure Calculations for α-(BEDT-TTF)_2I_3
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概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 2006-01-15
著者
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TERAKURA Kiyoyuki
Japan Advanced Institute of Science and Technology
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KOHYAMA Masanori
Research Institute for Ubiquitous Energy Devices (UBIQEN)
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TERAKURA Kiyoyuki
Creative Research Initiative "Sousei", Hokkaido University
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Ishibashi Shoji
Research Institute For Computational Sciences (rics) National Institute Of Advanced Industrial Scien
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Kohyama Masanori
Research Institute For Ubiquitous Energy Devices (ubiqen) Aist
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Tamura Tomoyuki
Research Institute For Computational Sciences National Institute Of Advanced Industrial Science And
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Ishibashi Shoji
Research Institute For Computational Sciences National Institute Of Advanced Industrial Science And
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TERAKURA Kiyoyuki
Creative Research Initiative "Sousei", Hokkaido University
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ISHIBASHI Shoji
Research Institute for Computational Sciences (RICS), National Institute of Advanced Industrial Science and Technology (AIST)
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TAMURA Tomoyuki
Research Institute for Computational Sciences (RICS), National Institute of Advanced Industrial Science and Technology (AIST)
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KOHYAMA Masanori
Research Institute for Ubiquitous Energy Devices (UBIQEN), AIST
関連論文
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- Special Issue on Advances in Computational Materials Science and Engineering III
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- First-Principles Calculations of Schottky Barrier Heights of Monolayer Metal/6H-SiC{0001} Interfaces
- Ab Initio Electronic-Structure Calculations for α-(BEDT-TTF)_2I_3
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