Ultra-Shallow and Abrupt Boron Profiles in Si by δ-Doping Technique

概要

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Ultra-shallow and abrupt boron (B) profiles in Si are achieved by molecular beam epitaxy, and the thermal stability of these profiles is closely examined. Oxidation-enhanced diffusion of a B-δ-doped Si layer is observed at 700-850℃. However, broadening of the δ-doped layer during gate oxidation can be minimized by wet O_2 oxidation owing to the shorter oxidation time than that of dry O_2. The sheet resistance of heavily δ-doped layers with ultra-shallow junctions is 1 kΩ/sq which is almost constant even after thermal annealing. This value is about 1/10 of the reported value obtained by solid-phase diffusion from boron-silicated glass film, in which solid solubility limits the maximum carrier concentration.
社団法人応用物理学会の論文
1995-02-28