On the Phase Transition-Like Structure Change of Disordered Lattice State of GaP (Selected Topics in Semiconductor Physics<特集>) -- (Impurity and Disordered States)
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At the temperature around 400°C, a kind of irreversible structural phase transition from a disordered state of GaP to a more dense non-crystalline state is observed. The experimental data on the dense non-crystalline state show volume shrinkage, decrease of ESR signal, increase of optical transparency and increase of resistivity. The electron diffraction data show a broad ring pattern which implies existence of short range ordering. Moreover, when the sample temperature during implantation is elevated above the transition temperature of 400°C, no remarkable lattice defect due to nitrogen ion implantation is induced even with 200 keV kinetic energy. It is thought that these two phenomena are based upon same origin which lies in the ionic bonding nature of compounds.
- 理論物理学刊行会の論文
- 1975-11-29
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