Cis-Trans Photoisomerization of Perinaphthothioindigo for Use as a Photo-Imaging Sensor Using Fluorescence under He-Ne Laser Excitation

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概要

• 論文の詳細を見る

• An imaging sensor based on the cis/trans isomerization of thioindigoid dyes is proposed. A photo-image (〜500nm) is stored as a density distribution of the trans-form in the cis-form material, and read out as fluorescence (〜700nm) from the trans-form by scanning with He-Ne laser (633nm) excitation. As the fluorescence decay time of perinaphthothioindigo is 1.8ns, the sensor permits rapid read-out. For light exposure L from 10^<-4> to 10^<-1> J/cm^2 at 500nm, the fluorescence intensity under laser excitation varies as L<0.8>.

• 社団法人応用物理学会の論文
• 1985-02-20

著者

• Ueda K

  Kitami Inst. Technol. Hokkaido

• UMETANI Keiji

  Central Research Laboratory, Hitachi Ltd.

• Taniguchi Yoshio

  Central Research Laboratory Hitachi Ltd.

• Taniguchi Yoshio

  Central Research Laboratory Hitachi Ltd Po Box 2

• TAKAHASHI Tetsuhiko

  Central Research Laboratory, Hitachi, Ltd.

• KANO Tsuyoshi

  Central Research Laboratory, Hitachi, Ltd.

• Hashimoto Michiaki

  Central Research Laboratory Hitachi Ltd Po Box 2

• Umetani K

  Japan Synchrotron Radiation Research Institute (jasri)

• Kano T

  Central Research Laboratory Hitachi Ltd Po Box 2

• Kano Tsuyoshi

  Central Research Laboratory Hitachi Ltd.

• Takahashi Tetsuhiko

  Central Research Laboratory Hitachi Ltd Po Box 2

• YOKOUCHI Hisatake

  Central Research Laboratory, Hitachi Ltd, PO Box 2

• Yokouchi Hisatake

  Central Research Laboratory Hitachi Ltd Po Box 2

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• Cis-Trans Photoisomerization of Perinaphthothioindigo for Use as a Photo-Imaging Sensor Using Fluorescence under He-Ne Laser Excitation
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