The Effect of Nonuniform Doping Density on Electron States in n-Type Si Inversion Layers
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概要
- 論文の詳細を見る
Self-consistent numerical calculations of coupled Poisson and Schrodinger equations have been performed for electron states in n-type inversion layers on p-type silicon with a nonuniform doping density. The merits of a steplike doping profile consisting of low- and high-density regions are discussed.
- 社団法人応用物理学会の論文
- 1993-02-15
著者
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Muramatsu S
Univ. Tokyo Tokyo Jpn
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Muramatsu S
Hitachi Cable Ltd. Ibaraki Jpn
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Muramatsu Shinji
Department Of Electrical And Electronic Engineering Utsunomiya University
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TORIUMI Toshiyuki
Department of Electrical and Electronic Engineering, Faculty of Engineering, Utsunomiya University
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Toriumi Toshiyuki
Department Of Electrical And Electronic Engineering Faculty Of Engineering Utsunomiya University
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