Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices
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概要
- 論文の詳細を見る
The resistance switching mechanism of a metal/CuO/metal sandwich with a planar device structure has been studied. We report the direct observation of a conducting bridge within the CuO channel of the device, which is formed upon the initial voltage application (forming process). It is found that the resistance switching phenomenon only occurs when just a single bridge is formed during a soft dielectric breakdown. We argue that the reduction and oxidation of this conducting bridge by the action of an applied field and/or current gives rise to a novel nonvolatile memory effect.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-08-25
著者
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Nakamura Yoshinobu
Department of Advanced Materials and Department of Applied Chemistry, University of Tokyo, Kashiwa, Chiba 277-8561, Japan
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Takagi Hidenori
Department of Advanced Materials and Department of Applied Chemistry, University of Tokyo, Kashiwa, Chiba 277-8561, Japan
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Fujiwara Kohei
Department of Advanced Materials and Department of Applied Chemistry, University of Tokyo, Kashiwa, Chiba 277-8561, Japan
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Rozenberg Marcelo
Department of Advanced Materials and Department of Applied Chemistry, University of Tokyo, Kashiwa, Chiba 277-8561, Japan
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Nemoto Takumi
Department of Advanced Materials and Department of Applied Chemistry, University of Tokyo, Kashiwa, Chiba 277-8561, Japan
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