Electrode-Geometry Control of the Formation of a Conductive Bridge in Oxide Resistance Switching Devices

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概要

• 論文の詳細を見る

• Control of the formation of conductive bridge between the metal electrodes in planar-type resistance switching device was attempted. We demonstrated in Pt/CuO/Pt devices that, using a triangular seed electrode for soft breakdown, the position and the size of the bridge can be controlled. The decrease in the size resulted in the drastic reduction of operation voltage and current to the same level as in capacitor-type stacked device. We argue that the planar-type device might have a certain advantage for future non-volatile memory application.

• Japan Society of Applied Physicsの論文
• 2009-08-25

著者

• FUJIWARA Kohei

  Department of Complexity Science & Engineering, Graduate School of Frontier Sciences, The University

• NAKAMURA Yoshinobu

  Department of Clinical Pathology, Kinki University School of Medicine

• TAKAGI Hidenori

  Department of Applied Physics,The University of Tokyo

• Takagi Hidenori

  Department Of Advanced Materials Science University Of Tokyo

• Takagi Hidenori

  Department Of Advanced Materials University Of Tokyo

• Nakamura Yoshinobu

  Department Of Cardiovascular And Respiratory Surgery Tottori Prefectural Central Hospital

• Rozenberg Marcelo

  Laboratoire De Physique Des Solides Universite Paris-sud

• Yajima Takeshi

  Department of Advanced Materials, University of Tokyo, Kashiwa, Chiba 277-8561, Japan

• Fujiwara Kohei

  Department Of Advanced Materials University Of Tokyo

• Yajima Takeshi

  Department Of Advanced Materials University Of Tokyo

• Nakamura Yoshinobu

  Department Of Advanced Materials University Of Tokyo

• Nakamura Yoshinobu

  Department of Advanced Materials and Department of Applied Chemistry, University of Tokyo, Kashiwa, Chiba 277-8561, Japan

• Takagi Hidenori

  Department of Advanced Materials and Department of Applied Chemistry, University of Tokyo, Kashiwa, Chiba 277-8561, Japan

• Fujiwara Kohei

  Department of Advanced Materials and Department of Applied Chemistry, University of Tokyo, Kashiwa, Chiba 277-8561, Japan

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