Spatial Redistribution of Oxygen Ions in Oxide Resistance Switching Device after Forming Process

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概要

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• The change in the spatial distribution of oxygen ions after an initial voltage application called the forming process was investigated for oxide resistance switching devices by secondary ion mass spectrometry mapping. To track the motion of oxygen ions, tracer 18O ions were implanted in a planar Pt/CuO/Pt device. We found clear evidence for the oxygen reduction in the conductive bridge structure formed between two electrodes. In addition, the oxygen ions in the bridge structure drift to the anode, implying the oxygen diffusion (migration) induced by high electric field and/or current density. We discuss those results in terms of a filament model.

• 2010-06-25

著者

• NAKAO Aiko

  RIKEN (The Institute of Physical and Chemical Research)

• Yajima Takeshi

  Department Of Advanced Materials University Of Tokyo

• Kei Sunouchi

  RIKEN, Advanced Science Institute, Wako, Saitama 351-0198, Japan

• Yoshinobu Nakamura

  Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan

• Tomohiro Kobayashi

  RIKEN, Advanced Science Institute, Wako, Saitama 351-0198, Japan

• Hidenori Takagi

  Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan

• Fujiwara Kohei

  RIKEN, Advanced Science Institute, Wako, Saitama 351-0198, Japan

• Toshiyuki Tanaka

  RIKEN, Advanced Science Institute, Wako, Saitama 351-0198, Japan

• Yoshiaki Suzuki

  RIKEN, Advanced Science Institute, Wako, Saitama 351-0198, Japan

• Mai Takeda

  Foundation for Promotion of Material Science and Technology of Japan, Setagaya, Tokyo 157-0067, Japan

• Kentaro Kojima

  Foundation for Promotion of Material Science and Technology of Japan, Setagaya, Tokyo 157-0067, Japan

• Kouji Taniguchi

  Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan

• Kohei Fujiwara

  RIKEN, Advanced Science Institute, Wako, Saitama 351-0198, Japan

• Takeshi Yajima

  Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan

関連論文

• Effect of Oxygen Nonstoichiometry on the Transport Properties of Ba_2YCu_3O_ : I. Oxides
• Metal-Insulator Transition in a Pyrochlore-type Ruthenium Oxide, Hg_2Ru_2O_7(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
• Electrode-Geometry Control of the Formation of a Conductive Bridge in Oxide Resistance Switching Devices
• Spatial Redistribution of Oxygen Ions in Oxide Resistance Switching Device after Forming Process
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• Erratum: "Metal–Insulator Transition in a Pyrochlore-type Ruthenium Oxide, Hg2Ru2O7"

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