Low-Temperature Microwave Plasma Etching of Crystalline Silicon
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概要
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Low-temperature microwave plasma etching of crystalline silicon is described. Vertical and lateral etch rates of Si and the selectivities of Si to photoresist are measured as a function of wafer temperature within a range of -150 to +30℃ for SF_6, CF_4, and NF_3. The results indicate that (1) dramatic reductions in lateral etch rate are obtained below -130℃, (2) vertical etch rates remain high up to 1.4 μm/min in the range of -140 to +30℃ for SF_6, and (3) the selectivities become high at low temperatures (e.g., > 40 at -90℃ and 2.3 Pa). This etching enables highly anisotropic Si etching at a high etch rate and high selectivity with fluoride gases. Less-polymerizing-type gases can provide high etch rates. An etching model of the ion-bombarded surfaces is discussed. The model implies that separate control of the side wall reaction and the horizontal surface reaction is achieved by the low-temperature etching.
- 社団法人応用物理学会の論文
- 1991-12-15
著者
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Tachi Shinichi
Central Research Laboratory Hitachi Lid.
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Okudaira Sadayuki
Central Research Laboratory Hitachi Limited
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Tsujimoto Kazunori
Central Research Laboratory Hitachi Ltd
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TACHI Shinichi
Central Research Laboratory, Hitachi, Lid.
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OKUDAIRA Sadayuki
Central Research Laboratory, Hitachi, Lid.:(Present address)Device Development Center, Hitachi, Lid.
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TSUJIMOTO Kazunori
Central Research Laboratory, Hitachi, Lid.
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