Tamura M | Univ. Tokyo Tokyo Jpn
スポンサーリンク
概要
関連著者
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Tamura M
Univ. Tokyo Tokyo Jpn
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Arai S
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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TAMURA Masao
Optoelectronics Technology Research Laboratory
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Tamura Masao
Optoelectronic Research Laboratory:(present Address) Angstrom Technology Partnership
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TAMURA Munehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Tamura Munehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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ARAI Shigehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Arai Shigehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Tamura S
Sony Corp. Yokohama Jpn
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TAMURA Shigeo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Tamura Shigeo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Hashimoto A
Tokyo Ohka Kogyo Co. Ltd. Kanagawa Jpn
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Hashimoto Akihiro
Optoelectronics Technology Research Laboratory
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Sugiyama N
Mirai-association Of Super-advanced Electronics Technology (aset)
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Sugiyama N
Research And Development Center Toshiba Corporation
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NUNOYA Nobuhiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Saitoh T
Faculty Of Technology Tokyo University Of Agriculture And Technology
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Saitoh T
Ntt Basic Research Laboratories Physical Science Laboratory
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Nunoya Nobuhiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Saitoh T
Semiconductor Device Group Advanced Devices Development Center Matsushita Electric Industrial Co. Lt
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SAITOH Tohru
Optoelectronics Technology Research Laboratory
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Ishitani T
Semiconductor Energy Lab. Co. Ltd. Kanagawa Jpn
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Tamura Masao
Central Research Laboratory
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Ishitani T
Central Research Laboratory Hitachi Ltd
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Ishitani Tohru
Central Research Laboratory Hitachi Lid.
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Nunoya N
Tokyo Inst. Technol. Tokyo Jpn
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Shukuri S
Semiconductor & Integrated Circuits Div.hitachi Ltd.
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Shukuri Shoji
Central Research Laboratory Hitachi Ltd.
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Kojima Tetsuya
Department Of Electrical Engineering School Of Engineering Nagoya Univeristy
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淀 徳男
大阪工業大学工学部電子情報通信工学科
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Arai Shigehisa
Faculty Of Engineering Tokyo Institute Of Technology
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淀 徳男
大阪工大 工
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Shin K‐c
Department Of Organic And Polymeric Materials Tokyo Institute Of Technology
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Shin Ki-chul
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Palmer Joyce
Optoelectronics Technology Research Laboratory
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Kudo K
Tokyo Inst. Technol. Tokyo Jpn
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Ando Toshihiro
Core Research For Evolutional Science And Technology (crest) Japan Science And Technology Corporatio
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Kudo K
Research Laboratory Of Resources Utilization Tokyo Institute Of Technology
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Yodo Tokuo
Optoelectronics Technology Research Laboratory
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Kudo Kazuki
Ntt Interdisciplinary Research Laboratories
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Ando T
Okayama Prefectural Univ. Okayama Jpn
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SUGIYAMA Naoharu
Optoelectronics Technology Research Labolatry
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Ando T
School Of Medicine. Yokohama City University
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TAMURA Masao
Central Research Laboratory, Hitachi, Ltd.
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KOJIMA Takashi
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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ANDO Toshikazu
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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UBUKATA Akinori
Tsukuba Laboratories, Nippon Sanso Corporation
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Kudo K
Tohoku Univ. Sendai Jpn
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Ishitani Tohru
Central Research Laboratory Hitachi Ltd.
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Kojima T
Department Of Electrical Engineering School Of Engineering Nagoya Univeristy
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NAGASHIMA Yasuaki
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Nagashima Y
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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SHUKURI Shoji
Central Research Laboratory, Hitachi Ltd.
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Ando T
Chiba Inst. Sci. Chiba Jpn
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Ubukata A
Tsukuba Laboratories Nippon Sanso Corporation
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Kojima Takashi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Nakamura M
Institute Of Advanced Material Study And Department Of Molecular Science And Technology Graduate Sch
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SERIZAWA Naoki
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Serizawa Naoki
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Arai S
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Arai Shigehisa
Department Of Physical Electronics Tokyo Institute Of Technology
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Serizawa N
Tokyo Inst. Technol. Tokyo Jpn
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SUGIYAMA Naoharu
Research and Development Center, Toshiba Corporation
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Sugiyama Naoharu
Toshiba Research and Development Center, Toshiba Corporation
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TAMURA Shigeo
Department of Medicine and Clinical Science, Gunma University Graduate School of Medicine
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BACHER Gerd
Technische Physik, Universitat Wurzburg
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KUDO Koji
Department of Physical Electronics, Tokyo Institute of Technology
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NAKAMURA Madoka
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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TANAKA Suguru
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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NAKAYA Hiroyuki
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Bacher Gerd
Technical Physics Wurzburg University
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Wada Y
Institute Of Industrial Science University Of Tokyo:core Research For Evolutional Science And Techno
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Masuda Hiroo
Central Research Laboratory Hitachi Ltd.
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ICHIKAWA Masakazu
Central Research Laboratory, Hitachi Lid.
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Tamura Hifumi
Central Research Laboratory Hitachi Ltd.
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Tamura Shigeo
Department Of Medicine And Clinical Science Gunma University Graduate School Of Medicine
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Tachi Shinichi
Central Research Laboratory Hitachi Lid.
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Doi Takahisa
Central Research Laboratory, Hitachi Ltd.
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WADA Yasuo
Central Research Laboratory, Hitachi, Ltd.
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KUDO Koji
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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UBUKATA Akinori
Technology Division, Tsukuba Laboratory, Nippon Sanso Co.
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ARAI Shigehisa
Technology Division, Tsukuba Laboratory, Nippon Sanso Co.
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NAGASHIMA Yasuaki
Department of Physical Electronics, Tokyo Institute of Technology
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TAMURA Munehisa
Department of Physical Electronics, Tokyo Institute of Technology
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UBUKATA Akinori
Department of Physical Electronics, Tokyo Institute of Technology
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Ichikawa Masakazu
Central Research Laboratory
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Doi Takahisa
Central Research Laboratory
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Nakamura M
Toshiba Corp. Yokohama Jpn
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Nakaya Hiroyuki
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Kudo Koji
Department Of Physical Electronics Tokyo Institute Of Technology
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Nagashima Yasuaki
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Ichikawa Masakazu
Central Research Laboratory Hitachi Ltd.
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Wada Yasuo
Central Research Laboratory Hitach Ltd.
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ARAI Shigehisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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TAMURA HIFUMI
Central Research Lab., Hitachi Ltd.
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WADA Yasuo
Central Research Laboratory, Hitachi Ltd.
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Kudo Koji
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo
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KUDO Koji
Department of Applied Chemistry, Faculty of Engineering, Kanagawa University
著作論文
- In Situ Characterization of the Initial Growth Stage of GaAs on Si by Coaxial Impact-Collision Ion Scattering Spectroscopy
- Real-Time Observation of AlAs/GaAs Superlattice Growth by Coaxial Impact Collision Ion Scattering Spectroscopy
- Reduction of Dislocation Density in GaAs on Si Substrate by Si Interlayer and Initial Si Buffer Layer
- In Situ Analysis of Gallium Arsenide Surfaces by Coaxial Impact Collision Ion-Scattering Spectroscopy with an Off-Axis Ion Source
- Characterization of Etching Damage in Cl_2/H_2-Reactive-Ion-Etching of GaInAs/InP Heterostructure
- Sidewall Recombination Velocity in GaInAsP/InP Quantum-Well Lasers with Wire-like Active Region Fabricated by Wet-Chemical Etching and Organo-Metallic Vapor-Phase-Epitaxial Regrowth
- Strain Relaxation Processes in GaAs on Si by Two Groups of Misfit Dislocations
- Growth and Characterization of GaAs/GaSe/Si Heterostructures
- GaAs/AlAs and AlAs/GaAs Interface Formation Process Studied by Coaxial Impact-Collision Ion Scattering Spectroscopy: Comparison between Alternating and Simultaneous Source Supply
- Estimation of Sidewall Nonradiative Recombination in GaInAsP/InP Wire Structures Fabricated by Low Energy Electron-Cyclotron-Resonance Reactive-Ion-Beam-Etching
- Surface Damage in GaInAs/GaInAsP/InP Wire Structures Prepared by Substrate-Potential-Controlled Reactive Ion Beam Etching
- Fabrication of GaInAs/GaInAsP/InP Multi-Quantum-Wires and -Boxes by Substrate-Potential-Controlled Electron Cyclotron Resonance Reactive Ion Beam Etching
- GaInAsP/InP Compressively Strained Quantum-Wire Lasers Fabricated by Electron Beam Lithography and 2-Step Organometallic Vapor Phase Epitaxy
- High Dose Rate Effect of Focused-Ion-Beam Boron Implantation into Silicon
- Stripe Direction Dependence of Mesa Angle Formed on (100) InP by Selective Etching using HCl Solution
- Submicron Channel MOSFET Using Focused Boron Ion Beam Implantation into Silicon
- Electrical Properties of Focused-Ion-Beam Boron-Implanted Silicon