Growth Control of Nano-Needle on Silicon Surface Using Scanning Tunneling Microscope

スポンサーリンク

概要

• 論文の詳細を見る
• 1996-08-26

著者

• HEIKE Seiji

  Advanced Research Laboratory, Hitachi, Ltd.

• HASHIZUME Tomihiro

  Advanced Research Laboratory, Hitachi, Ltd.

• WADA Yasuo

  Advanced Research Laboratory, Hitachi Ltd.

• Hashizume Tomihiro

  Advanced Research Laboratory Hitachi Lid.

• Wada Y

  Institute Of Industrial Science University Of Tokyo:core Research For Evolutional Science And Techno

• Heike S

  Advanced Research Laboratory Hitachi Ltd.

• Heike Seiji

  Advanced Research Laboratory Hitachi Ltd.

• Hitosugi T.

  Department Of Superconductivity University Of Tokyo:(present Address)department Of Chemistry Univers

• Heike S.

  Advanced Research Laboratory Hitachi Ltd.

• Wada Yasuo

  Central Research Laboratory Hitach Ltd.

• Wada Yasuo

  Advanced Research Laboratory Hitachi Ltd.

• Heike S

  Hitachi Ltd. Saitama Jpn

• Hashizume Tomihiro

  Advanced Research Lab., Hitachi, Ltd., Hatoyama, Saitama 350-0395, Japan

• Heike Seiji

  Advanced Research Lab., Hitachi, Ltd., Hatoyama, Saitama 350-0395, Japan

関連論文

• Fabrication of Four-Probe Fine Electrodes Using Scanning-Probe Nanofabrication
• Fabrication Process of Fine Electrodes Using Shadow Mask Evaporation and Tip-Induced Local Oxidation
• Fabrication of Micromechanical Tunneling Probes and Actuators on a Silicon Chip
• A Digital-to-Analog Converter of Displacement by an Integrated Micromechanism
• Fabrication of Less Than a 10 nm Wide Polycrystalline Silicon Nano Wire
• Nanofabrication Using Atomic Force Microscopy Lithography for Molecular Devices
• Dot-Array Resist Patterning Using Scanning Probe Microscopy with a Hybrid Current-Voltage Control Method
• Nanofabrication Using Atomic Force Microscopy Lithography Combined with Optical Lithography
• Combining Atomic Force Microscopic Lithography with Photolithography
• Fabrication of High-Resolution and High-Aspect-Ratio Patterns on a Stepped Substrate by Using Scanning Probe Lithography with a Multilayer-Resist System
• Fabrication of High-Resolution and High-Aspect-Ratio Patterning on a Stepped Substrate by Scanning Probe Lithography Using a Multilayer-Resist System
• Characteristics of Nanoscale Lithography Using AFM with a Current-Controlled Exposure System
• Characteristics of Nanoscale Lithography Using Atomic Force Microscope with Current-Controlled Exposure System
• Direct Imaging of Thermodynamic Process In Atom Migration by Using Scanning Tunneling Microscopy
• Reduced Density of Missing-Dimer Vacancies on Tungsten-Contaminated Si (100)-(2×n) Surface by Hydrogen Termination
• Control of Surface Current on a Si(111) Surface by Using Nanofabrication
• Theoretical Study of Ga Adsorbates around Dangling-Bond Wires on am H-Terminated Si Surface: Possibility of Atomic-Scale Ferromagnets
• Initial Stage of Molecular Adsorption on Si(100) and H-terminated Si(100) Investigated by UHV-STM(STM-Si(001))
• Scanning Tunneling Spectroscopy of Dangling-Bond Wires Fabricated on the Si(100) -2 × 1 -H Surface
• Property Change of Si(111) Surface by Scanning Tunneling Microscope Manipulation
• Evaluation of Thin Silicon Dioxide Layers by Beam Assisted Scanning Tunneling Microscope
• Observation of Threefold Symmetry Images due to a Point Defect on a Graphite Surface Using Scanning Tunneling Microscope (STM)
• Direct Observation of Working Vacuum Tunnel Junctions Using a Transmission Electron Microscope
• Silicon Planar Devices Using Nitrogen Ion Implantation
• Oxidation Characteristics of Nitrogen Implanted Silicon
• Substrate Temperature Measurement during Ion Implantation
• Lifetime Evaluation of Ion Implanted Layers by Pulsed MOS Capacitance
• Prospects and Problems of Single Molecule Information Devices
• Pulse Injection of Carbon Nanotubes onto a H-terminated Si(100) Surface
• First Principles Study of Dihydride Chains on H-Terminated Si(100)-2×1 Surface (Special Issue: Scanning Tunneling Microscopy/Spectroscopy and Related Techniques)
• Scanning Tunneling Microscopy/Spectroscopy of La_2@C_ Multilayer Islands on Si(100)-2×1-H Surfaces
• Initial-Stage Dihydride Formation on Si(100)-2x1-H Surface
• Scanning Tunneling Microscopy of the GaAs(001) Surface Reconstructions(STM-GaAs)
• FI-STM Investigation of Fullerenes Adsorbed on the Semiconductor and Metal Surfaces(STM-C_)
• Initial Backbond Oxidation at an Unpaired Dangling Bond Site on a Hydrogen-Terminated Si (100) 2×1 Surface
• Electrical Conductivity Measurement of DNA Double-Stranded Chains by "One-by-One" Cutting Method Using Atomic Force Microscopy(Cross-disciplinary physics and related areas of science and technology)
• Electrical Conduction of Ag Nanowire Fabricated on Hydrogen-Terminated Si(100) Surface (Special Issue: Scanning Tunneling Microscopy/Spectroscopy and Related Techniques)
• Submicron Channel MOSFET Using Focused Boron Ion Beam Implantation into Silicon
• Study of Initial Stage of Molecular Adsorption on Si(100) by Scanning Tunneling Microscopy
• Growth Control of Nano-Needle on Silicon Surface Using Scanning Tunneling Microscope
• Development of an In-Situ Method of Fabricating Artificial Atom Structures on the Si(100) Surface
• Interaction of Ga Adsorbates with Dangling Bonds on the Hydrogen Terminated Si(100) Surface
• In Situ Direct Imaging of Scanning Tunneling Microscope Tip Apex
• In Situ Direct Imaging of Scanning Tunneling Microscope Tip Apex
• Room-Temperature Adsorption of Si Atoms on H-terminated Si(001)-2×1 Surface(Condensed Matter: Structure, Mechanical and Thermal Properties)
• Experimental Determination of Current Paths of Ions Implanted into Insulators
• New Apparatus for Measuring the Complex Dielectric Constant of a Highly Conductive Material
• Application of High Current Arsenic Ion Implantation to Dynamic MOS Memory LSI's : A-4: DEVICE TECHNOLOGY (1)
• Optical Limitation in Fine Pattern Photolithography
• Nanofabrication Using Atomic Force Microscopy Lithography Combined with Optical Lithography
• Surface Potential Measurement by Atomic Force Microscopy Using Quartz Resonator
• First Principles Study of Dihydride Chains on H-Terminated Si(100)-$2{\times}1$ Surface
• Electrical Conduction of Ag Nanowire Fabricated on Hydrogen-Terminated Si(100) Surface
• Scanning Tunneling Microscopy/Spectroscopy of La2@C72 Multilayer Islands on Si(100)-2$\times$1-H Surfaces
• Fabrication of Four-Probe Fine Electrodes Using Scanning-Probe Nanofabrication
• Electronic Structures of Individual Poly(3-hexylthiophene) Nanowires on Hydrogen-Terminated Si(100) Surfaces
• Fabrication of Micromechanical Tunneling Probes and Actuators on a Silicon Chip
• Characteristics of Nanoscale Lithography Using AFM with a Current-Controlled Exposure System
• Initial-Stage Dihydride Formation on Si(100)-$2{\times}1$-H Surface

もっと見る 閉じる

スポンサーリンク