Room-Temperature Adsorption of Si Atoms on H-terminated Si(001)-2×1 Surface(Condensed Matter: Structure, Mechanical and Thermal Properties)
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概要
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Room-temperature adsorption of Si atoms on a hydrogen-terminated Si(001)-2×1 surface is studied using scanning tunneling microscopy/spectroscopy and first-principles total-energy calculations. We find that a Si atom adsorbs at the metastable bridge site of a Si dimer forming a SiH_2 cluster at room temperature. Although Si adatom has a kinetic energy sufficient to overcome the activation energy at the moment of adsorption, the reaction path to the most stable off-centered inter-bridge site is narrow and the energy dissipation takes place before the transition. The ground-state adsorption is achieved by an annealing of the sample at 520K.
- 社団法人日本物理学会の論文
- 2005-01-15
著者
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Kajiyama Hiroshi
Advanced Research Laboratory Hitachi Ltd.
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Heike S
Advanced Research Laboratory Hitachi Ltd.
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Hashizume T.
Advanced Research Laboratory, Hitachi Ltd.
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Hitosugi T.
Department Of Superconductivity University Of Tokyo:(present Address)department Of Chemistry Univers
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SUWA Y.
Advanced Research Laboratory, Hitachi, Ltd.
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HEIKE S.
Advanced Research Laboratory, Hitachi, Ltd.
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FUJIMORI M.
Advanced Research Laboratory, Hitachi, Ltd.
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NARA J.
National Research Institute for Metals
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OHNO T.
National Research Institute for Metals
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MATSUURA S.
Department of Superconductivity, University of Tokyo
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Heike S.
Advanced Research Laboratory Hitachi Ltd.
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HASHIZUME T.
Advanced Research Laboratory, Hitachi, Ltd.
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