Initial Backbond Oxidation at an Unpaired Dangling Bond Site on a Hydrogen-Terminated Si (100) 2×1 Surface

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-11-15

著者

• HEIKE Seiji

  Advanced Research Laboratory, Hitachi, Ltd.

• HASHIZUME Tomihiro

  Advanced Research Laboratory, Hitachi, Ltd.

• Kajiyama H

  Hitachi Ltd. Saitama Jpn

• Kajiyama Hiroshi

  Advanced Research Laboratory Hitachi Ltd.

• Kajiyama Hiroshi

  Hitachi Research Laboratory Hitachi Ltd.

• Hashizume Tomihiro

  Advanced Research Laboratory Hitachi Lid.

• HITOSUGI Taro

  Department of Chemistry, University of Tokyo

• Heike S

  Advanced Research Laboratory Hitachi Ltd.

• Heike Seiji

  Advanced Research Laboratory Hitachi Ltd.

• Hitosugi T.

  Department Of Superconductivity University Of Tokyo:(present Address)department Of Chemistry Univers

• Heike S.

  Advanced Research Laboratory Hitachi Ltd.

• Heike S

  Hitachi Ltd. Saitama Jpn

• Hashizume Tomihiro

  Advanced Research Lab., Hitachi, Ltd., Hatoyama, Saitama 350-0395, Japan

• Hitosugi Taro

  Department of Chemistry, The University of Tokyo, Tokyo 113-0033, Japan

• Heike Seiji

  Advanced Research Lab., Hitachi, Ltd., Hatoyama, Saitama 350-0395, Japan

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