Ultra Thin TiN Films Prepared by an Advanced Ion-Plating Method
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Institute of Metalsの論文
- 2000-09-20
著者
-
Minemura T
Hitachi Ltd. Ibaraki Jpn
-
ONISAWA Ken-ichi
Hitachi Research Laboratory, Hitachi, Ltd.
-
MINEMURA Tetsuroh
Hitachi Research Laboratory, Hitachi, Ltd.
-
Kajiyama H
Hitachi Ltd. Saitama Jpn
-
Kajiyama Hiroshi
Hitachi Research Laboratory Hitachi Ltd.
-
Minemura Tetsuroh
Hitachi Research Laboratory Hitachi Ltd.
-
Nose Koichi
R&d Center Shinmaywa Industries Ltd.
-
UETANI Kazuo
R & D Center, ShinMaywa Industries, Ltd.
-
NOSE Koichi
R & D Center, ShinMaywa Industries, Ltd.
-
YAMAGUCHI Tomoko
R & D Center, ShinMaywa Industries, Ltd.
-
Uetani Kazuo
R&d Center Shinmaywa Industries Ltd.
-
Onisawa K
Hitachi Research Laboratory Hitachi Ltd.
-
Onisawa Ken-ichi
Hitachi Research Laboratory Hitachi Ltd.
-
Yamaguchi Tomoko
R & D Center Shinmaywa Industries Ltd.
関連論文
- Crystalline Fraction of Microcrystalline Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Using Pulsed Silane Flow
- Fabrication of High-Resolution and High-Aspect-Ratio Patterns on a Stepped Substrate by Using Scanning Probe Lithography with a Multilayer-Resist System
- Fabrication of High-Resolution and High-Aspect-Ratio Patterning on a Stepped Substrate by Scanning Probe Lithography Using a Multilayer-Resist System
- Characteristics of Nanoscale Lithography Using AFM with a Current-Controlled Exposure System
- Characteristics of Nanoscale Lithography Using Atomic Force Microscope with Current-Controlled Exposure System
- Accurate Determination of the Urbach Energy of a-Si:H Thin Films by Correction for the Interference Effect
- In Situ Optical Measurement Using Optical Fibers for a-Si:H Ultra-Thin Films: Theoretical and Numerical Analysis
- Effects of Back-Channel Etching on the Performance of a-Si:H Thin-Film Transistors
- Structural Change during Annealing of Amorphous Indium-Tin Oxide Films Deposited by Sputtering with H_2O Addition
- Initial Backbond Oxidation at an Unpaired Dangling Bond Site on a Hydrogen-Terminated Si (100) 2×1 Surface
- Calculation of Bond Lengths in Si_Ge_x Alloys Based on the Valence-Force-Field Model
- Secondary Electron Emission Characteristics of MgO Thin Films Prepared by an Advanced Ion-Plating Method
- Ion-Plating Deposition of MgO Thin Films
- Oxidation Mechanism of Ultra Thin TiN Films Prepared by an Advanced Ion-plating Method
- Ultra Thin TiN Films Prepared by an Advanced Ion-Plating Method
- Effects of Substrate Temperature during Phosphor Layer Deposition on Luminance of SrS:Ce Blue-Green-Emitting Thin-Film Electroluminescent Devices
- Effects of Oxygen in CaS:Eu Active Layers on Emission Properties of Thin Film Electroluminescent Cells
- Electroluminescence in CaO:Eu Thin Film
- Order-Disorder Transition in Sputter-Deposited Silver-Zinc Alloy Films
- Thermo-Photometric Study on Phase Transitions in Sputter-Deposited Ag-Zn Alloy Thin Films
- White Light Emitting Thin Film Electroluminescent Cells with SrS:Pr,Ce Active Layer and Their Application to Multicolor Electroluminescent Devices