Wiedmann Jorg | Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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概要
関連著者
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Wiedmann Jorg
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Arai Shigehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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WIEDMANN Jorg
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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ARAI Shigehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Arai S
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Arai Shigehisa
Faculty Of Engineering Tokyo Institute Of Technology
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Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Arai I
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Raj Mothi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Ebihara Koji
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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EBIHARA Koji
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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TAMURA Shigeo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Tamura Shigeo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Tamura Shin-ichiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Ebihara K
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Saka Yoshikazu
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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SAKA Yoshikazu
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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KIM Hyo-Chang
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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MATSUI Kensuke
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Kim H‐c
Seoul National Univ. Seoul Kor
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Matsui K
Sanyo Electric Co. Ltd. Osaka Jpn
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Kim Hyo-chang
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Matsui Kensuke
Research And Development Division Kurita Water Industries Ltd
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SERIZAWA Naoki
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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YASUMOTO Hideo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Toyoshima Shunsuke
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Yasumoto Hideo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Serizawa Naoki
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology:(present Address)ntt Da
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Serizawa Naoki
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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CHEN Bo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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OHTA Masataka
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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SHIM Jong-In
Department of Electronics Engineering, Hanyang University
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Shim Jong-in
Department Of Electronics Engineering Hanyang University
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Ohta M
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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MATSUI Ken-ichi
Department of Physics, Faculty of Science, Osaka University
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Chen Bo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Ohta Masataka
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Shim Jong-In
Department of Electrical and Computer Engineering, Hanyang University, 1271 Sa 3-dong, Sangnok-gu, Ansan, Gyeonggi-do 426-791, Korea
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Ebihara Koji
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Saka Yoshikazu
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Toyoshima Shunsuke
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
著作論文
- Highly Uniform 1.5 μm Wavelength Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Lasers
- Theoretical Analysis of GaInAsP/InP Multiple Micro-Cavity Laser
- Continuous Wave Operation of 1.55 μm GaInAsP/InP Laser with Semiconductor/Benzocyclobutene Distributed Bragg Reflector
- GaInAsP/InP Distributed Reflector Lasers Consisting of Deeply Etched Vertical Gratings : Optics and Quantum Electronics
- 1.5-μm-Wavelength Distributed Feedback Lasers With Deeply Etched First-Order Vertical Grating : Optics and Quantum Electronics
- Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Laser Combined with Multiple Cavities for 1.5-μm-Wavelength Single-Mode Operation
- High-Reflectivity Semiconductor/Benzocyclobutene Bragg Reflector Mirrors for GaInAsP/InP Lasers