Saka Yoshikazu | Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
スポンサーリンク
概要
関連著者
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Raj Mothi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Wiedmann Jorg
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Arai Shigehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Saka Yoshikazu
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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WIEDMANN Jorg
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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SAKA Yoshikazu
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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ARAI Shigehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Ebihara Koji
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Arai S
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Arai Shigehisa
Faculty Of Engineering Tokyo Institute Of Technology
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Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Arai I
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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EBIHARA Koji
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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YASUMOTO Hideo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Toyoshima Shunsuke
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Yasumoto Hideo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Ebihara K
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Ebihara Koji
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Saka Yoshikazu
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Toyoshima Shunsuke
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
著作論文
- Highly Uniform 1.5 μm Wavelength Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Lasers
- Continuous Wave Operation of 1.55 μm GaInAsP/InP Laser with Semiconductor/Benzocyclobutene Distributed Bragg Reflector
- High-Reflectivity Semiconductor/Benzocyclobutene Bragg Reflector Mirrors for GaInAsP/InP Lasers