Measurement of Zn Doping Level in InGaAsP/InP DH Lasers

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1979-08-05

著者

• Suematsu Yasuharu

  Department Of Electronic Engineering Kohgakuin University

• Itaya Yoshio

  Department Of Physical Electronics Tokyo Institute Of Technology

• ROZENTAL Arnold

  Department of Physical Electronics, Tokyo Institute of Technology

• Rozental Arnold

  Department Of Physical Electronics Tokyo Institute Of Technology:(permanent Address)institute Of Phy

関連論文

• Low-Damage GaInAs(P)/InP Nanometer Structure by Low-Pressure ECR-RIBE
• Electric Field Induced Reflection in GaInAsP/InP MQW Structure
• Electric Field-Induced Absorption in GaInAsP/InP MQW Structures Grown by LPE
• Fabrication of GaInAs/InP Quantum Wires by Organometallic-Vapor-Phase-Epitaxial (OMVPE) Selective Growth on Grooved Side Walls of Ultrafine Multilayers
• A New-Type 1.5 〜 1.6 μm GaInAsP/InP BIG-DBR Laser by an Island-Type Mesa Process
• Light Emission from Quantum-Box Structure by Current Injection
• Spontaneous Recombination, Gain and Refractive Index Variation for 1.6 μm Wavelength InGaAsP/InP Lasers
• The Temperature Dependence of the Efficiency and Threshold Current of In_Ga_xAs_yP__ Lasers Related to Intervalence Band Absorption
• 1.5-1.6 μm Wavelength (100) GaInAsP/InP DH Lasers : B-3: LASER
• Room Temperature CW Operation of GaInAsP/InP DH Laser Emitting at 1.51 μm
• Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 μm
• 1.67 μm Ga_In_As/InP DH Lasers Double Cladded with InP by LPE Technique
• Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with(100)Substrate in the Range of 1.2-1.5 μm
• Ga_xIn_As_yP_-InP Injection Laser Partially Loaded with Distributed Bragg Reflector
• Twin-Guide Laser with Narrow Radiation Angle
• Monolithic Integration of Laser and Amplifier/Detector by Twin-Guide Structure
• Theoretical Gain of Quantum-Well Wire Lasers
• GaInAsP/InP Surface Emitting Injection Lasers
• Violet and Near-UV Light Emission from GaN/Al_Ga_N Injection Diode Grown on (0001) 6H-SiC Substrate by Low-Pressure Metal-Organic Vapor Phase Epitaxy
• GaInAsP/InP Single Quantum-Well Lasers by OMVPE
• Conditions for OMVPE Growth of GaInAsP/InP Crystal
• 1.6 μm Wavelength Buried Heterostructure GaInAsP/InP Lasers
• Single Transverse Mode Operation of Terraced Substrate GaInAsP/InP Lasers at 1.3μm Wavelength
• Temperature Characteristics of a GaAs-AlGaAs Integerated Twin Guide Laser with Distributed Bragg Reflectors
• GaInAsP/InP Integrated Twin-Guide Lasers with First-Order Distributed Bragg Reflectors at 1.3 μm Wavelength
• Measurement of Zn Doping Level in InGaAsP/InP DH Lasers
• Novel Structure GaInAsP/InP 1.5-1.6 μm Bundle Integrated-Guide (BIG) Distributed Bragg Reflector Laser
• Dynamic-Single-Mode Semiconductor Lasers : B-2: LD AND LED-1
• An Approximate Analysis of Gain Suppression in Injection Lasers for Band-to-Band and Band-to-Impurity-Level Transitions
• (Invited) Theory of Single Mode Injection Lasers Taking Account of Electronic Intra-band Relaxation : B-4: LASERS (1)
• Experimental Studies on the Limitation of Focussing Power of Hyperbolic-Type Gas Lens

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