GaInAsP/InP Surface Emitting Injection Lasers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1979-12-05
著者
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SUEMATSU Yasuharu
Department of Physical Electronics, Tokyo Institute of Technology
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Suematsu Yasuharu
Department Of Physical Electronics Tokyo Institute Of Technology
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Suematsu Yasuharu
Department Of Electronic Engineering Kohgakuin University
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SODA Haruhisa
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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IGA Ken-ichi
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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KITAHARA Chiyuki
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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Soda Haruhisa
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Iga Ken-ichi
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Kitahara Chiyuki
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
関連論文
- Low-Damage GaInAs(P)/InP Nanometer Structure by Low-Pressure ECR-RIBE
- Electric Field Induced Reflection in GaInAsP/InP MQW Structure
- Electric Field-Induced Absorption in GaInAsP/InP MQW Structures Grown by LPE
- Fabrication of GaInAs/InP Quantum Wires by Organometallic-Vapor-Phase-Epitaxial (OMVPE) Selective Growth on Grooved Side Walls of Ultrafine Multilayers
- A New-Type 1.5 〜 1.6 μm GaInAsP/InP BIG-DBR Laser by an Island-Type Mesa Process
- Light Emission from Quantum-Box Structure by Current Injection
- Spontaneous Recombination, Gain and Refractive Index Variation for 1.6 μm Wavelength InGaAsP/InP Lasers
- The Temperature Dependence of the Efficiency and Threshold Current of In_Ga_xAs_yP__ Lasers Related to Intervalence Band Absorption
- 1.5-1.6 μm Wavelength (100) GaInAsP/InP DH Lasers : B-3: LASER
- Room Temperature CW Operation of GaInAsP/InP DH Laser Emitting at 1.51 μm
- Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 μm
- 1.67 μm Ga_In_As/InP DH Lasers Double Cladded with InP by LPE Technique
- Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with(100)Substrate in the Range of 1.2-1.5 μm
- Ga_xIn_As_yP_-InP Injection Laser Partially Loaded with Distributed Bragg Reflector
- Twin-Guide Laser with Narrow Radiation Angle
- Monolithic Integration of Laser and Amplifier/Detector by Twin-Guide Structure
- Theoretical Gain of Quantum-Well Wire Lasers
- GaInAsP/InP Surface Emitting Injection Lasers
- Violet and Near-UV Light Emission from GaN/Al_Ga_N Injection Diode Grown on (0001) 6H-SiC Substrate by Low-Pressure Metal-Organic Vapor Phase Epitaxy
- GaInAsP/InP Single Quantum-Well Lasers by OMVPE
- Conditions for OMVPE Growth of GaInAsP/InP Crystal
- 1.6 μm Wavelength Buried Heterostructure GaInAsP/InP Lasers
- Single Transverse Mode Operation of Terraced Substrate GaInAsP/InP Lasers at 1.3μm Wavelength
- GaInAsP/InP Surface Emitting Injection Laser with Buried Heterostructures
- Temperature Characteristics of a GaAs-AlGaAs Integerated Twin Guide Laser with Distributed Bragg Reflectors
- GaInAsP/InP Integrated Twin-Guide Lasers with First-Order Distributed Bragg Reflectors at 1.3 μm Wavelength
- Measurement of Zn Doping Level in InGaAsP/InP DH Lasers
- Novel Structure GaInAsP/InP 1.5-1.6 μm Bundle Integrated-Guide (BIG) Distributed Bragg Reflector Laser
- Dynamic-Single-Mode Semiconductor Lasers : B-2: LD AND LED-1
- Chemical Etching of InP and GaInAsP for Fabricating Laser Diodes and Integrated Optical Circuits
- An Approximate Analysis of Gain Suppression in Injection Lasers for Band-to-Band and Band-to-Impurity-Level Transitions
- (Invited) Theory of Single Mode Injection Lasers Taking Account of Electronic Intra-band Relaxation : B-4: LASERS (1)
- Experimental Studies on the Limitation of Focussing Power of Hyperbolic-Type Gas Lens
- Temperature Dependence of Hyperfine Spectrum of Rb D_1 Line