Chemical Etching of InP and GaInAsP for Fabricating Laser Diodes and Integrated Optical Circuits
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概要
- 論文の詳細を見る
Chemical etching techniques were developed for fabricating GaInAsP/InP DH lasers which aim at single (transverse and longitudinal) mode oscillations and their integrations. About fifty to sixty etching solutions were tested by examining the flatness of the etched surface. The volume ratio 1 : 2 : 1 in a combination of HCl, CH_3COOH, and H_2O_2 was found to be most suitable for our purpose. Its etching rate for InP and Ga_xIn_<1-x>As_yP_<1-y> was in proportion to t^<0.6〜0.8> at about 20℃, where t is the etching time, and it also etched Au/Zn or Au/Sn electrodes with an etching rate of 10-20 Å/s at about 20℃.
- 社団法人応用物理学会の論文
- 1980-01-05
著者
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Iga Kenichi
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Iga Kenichi
Research Laboratory Of Precision Machinery And Electronics
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Kitahara Chiyuki
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Kitahara Chiyuki
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology:(present Ad
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KAMBAYASH Toshio
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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Kambayash Toshio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology:(present Ad
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- Linewidth Measurement of a Single Longitudinal Mode AlGaAs Laser with a Fabry-Perot Interferometer
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