GaInAsP/InP Surface Emitting Injection Laser with Buried Heterostructures
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概要
- 論文の詳細を見る
The first surface emitting (SE) injection laser (λ≃1.2 μm) with buried structure has been realized from the GaInAsP/InP system. The circular active region of 50 μm in diameter is buried by employing the LPE growth of i) maskless planar buried heterostructure (PBH) and ii) conventional masked buried heterostructure (BH). The near field was of a circular pattern of about 50 μm in diameter and it has been confirmed that the lasing occurred in the direction perpendicular to the surface by comparing output powers from the surface and the edge. The lowest threshold current of the BH SE laser was 520 mA (26 kA/cm^2) at 77 K. The PBH SE laser had somewhat higher threshold than the BH SE laser at the present stage, but the PBH structure seems to be suitable for the SE laser because it has been found that it is easy to grow flatter surfaces.
- 社団法人応用物理学会の論文
- 1981-08-05
著者
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Iga Kenichi
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Iga Kenichi
Tokyo Institute Of Technology
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Moriki Kazunori
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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SODA Haruhisa
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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Soda Haruhisa
Tokyo Institute Of Technology
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Soda Haruhisa
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Iga Kenichi
Research Laboratory Of Precision Machinery And Electronics
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MOTEGI Yoshihiro
Tokyo Institute of Technology
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OKUDA Hajime
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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MOTEGI Yoshihiro
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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Okuda Hajime
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Okuda Hajime
Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210
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